- Series :
- Package / Case :
- Supplier Device Package :
- FET Type :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
- Vgs (Max) :
- Applied Filters :
6 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||||||
|
VIEW |
1,928
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 40V 2A 6UDFN | U-MOSVII-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 6-UDFN Exposed Pad | 6-UDFN (2x2) | 1W (Ta) | N-Channel | - | 40V | 2A (Ta) | 185 mOhm @ 1A, 8V | 1.2V @ 1mA | 2.2nC @ 4.2V | 130pF @ 10V | 1.8V, 8V | ±12V | |||
|
VIEW |
1,658
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 40V 2A CST3B | U-MOSVII-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 3-SMD, No Lead | CST3B | 1W (Ta) | N-Channel | - | 40V | 2A (Ta) | 215 mOhm @ 1A, 8V | 1.2V @ 1mA | 1.1nC @ 4.2V | 130pF @ 10V | 1.8V, 8V | ±12V | |||
|
VIEW |
2,569
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 60V 2A SOT23 | π-MOSV | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-23-3 Flat Leads | SOT-23F | 1W (Ta) | N-Channel | - | 60V | 2A (Ta) | 300 mOhm @ 1A, 10V | 2V @ 1mA | - | 150pF @ 10V | 3.3V, 10V | ±20V | |||
|
|
VIEW |
3,779
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 38V 2A | U-MOSIV | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-23-3 Flat Leads | SOT-23F | 1W (Ta) | N-Channel | - | 38V | 2A (Ta) | 150 mOhm @ 2A, 10V | 1.7V @ 1mA | 3nC @ 10V | 120pF @ 10V | 4V, 10V | ±20V | |||
|
VIEW |
1,067
In-stock
|
Toshiba Semiconductor and Storage | MOSFET P-CH 60V 2A SOT23F | U-MOSVI | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-23-3 Flat Leads | SOT-23F | 1W (Ta) | P-Channel | - | 60V | 2A (Ta) | 300 mOhm @ 1A, 10V | 2V @ 1mA | 8.3nC @ 10V | 330pF @ 10V | 4V, 10V | +10V, -20V | |||
|
|
VIEW |
1,585
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 40V 2A SOT-23F | U-MOSVII-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-23-3 Flat Leads | SOT-23F | 1W (Ta) | N-Channel | - | 40V | 2A (Ta) | 185 mOhm @ 1A, 8V | 1.2V @ 1mA | 1.1nC @ 4.2V | 130pF @ 10V | 1.8V, 8V | ±12V | |||
