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Picture	Mfr Part #	QUANTITY		Inventory	MANUFACTURE	Description	Package	Series	Part Status	Packaging	Technology	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package	Power Dissipation (Max)	FET Type	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)
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	TK7P60W,RVQ	RFQ VIEW	PDF RFQ	2,589 In-stock	Toshiba Semiconductor and Storage	MOSFET N CH 600V 7A DPAK		DTMOSIV	Discontinued at Digi-Key	Cut Tape (CT)	MOSFET (Metal Oxide)	150°C (TJ)	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	DPAK	60W (Tc)	N-Channel	Super Junction	600V	7A (Ta)	600 mOhm @ 3.5A, 10V	3.7V @ 350µA	15nC @ 10V	490pF @ 300V	10V	±30V
	TK6P60W,RVQ	RFQ VIEW	PDF RFQ	2,270 In-stock	Toshiba Semiconductor and Storage	MOSFET N CH 600V 6.2A DPAK		DTMOSIV	Discontinued at Digi-Key	Cut Tape (CT)	MOSFET (Metal Oxide)	150°C (TJ)	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	DPAK	60W (Tc)	N-Channel	Super Junction	600V	6.2A (Ta)	820 mOhm @ 3.1A, 10V	3.7V @ 310µA	12nC @ 10V	390pF @ 300V	10V	±30V
	TK5P60W,RVQ	RFQ VIEW	PDF RFQ	1,724 In-stock	Toshiba Semiconductor and Storage	MOSFET N CH 600V 5.4A DPAK		DTMOSIV	Active	Cut Tape (CT)	MOSFET (Metal Oxide)	150°C (TJ)	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	DPAK	60W (Tc)	N-Channel	Super Junction	600V	5.4A (Ta)	900 mOhm @ 2.7A, 10V	3.7V @ 270µA	10.5nC @ 10V	380pF @ 300V	10V	±30V
	TK6P65W,RQ	RFQ VIEW	PDF RFQ	988 In-stock	Toshiba Semiconductor and Storage	MOSFET N-CH 650V 5.8A DPAK		DTMOSIV	Active	Cut Tape (CT)	MOSFET (Metal Oxide)	150°C (TJ)	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	DPAK	60W (Tc)	N-Channel	-	650V	5.8A (Ta)	1.05 Ohm @ 2.9A, 10V	3.5V @ 180µA	11nC @ 10V	390pF @ 300V	10V	±30V
	TK7P60W5,RVQ	RFQ VIEW	PDF RFQ	1,746 In-stock	Toshiba Semiconductor and Storage	MOSFET N-CH 600V 7A DPAK		DTMOSIV	Active	Cut Tape (CT)	MOSFET (Metal Oxide)	150°C (TJ)	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	DPAK	60W (Tc)	N-Channel	Super Junction	600V	7A (Ta)	670 mOhm @ 3.5A, 10V	4.5V @ 350µA	16nC @ 10V	490pF @ 300V	10V	±30V
	TK560P65Y,RQ	RFQ VIEW	PDF RFQ	3,615 In-stock	Toshiba Semiconductor and Storage	MOSFET N-CHANNEL 650V 7A DPAK		DTMOSV	Active	Cut Tape (CT)	MOSFET (Metal Oxide)	150°C (TJ)	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	DPAK	60W (Tc)	N-Channel	-	650V	7A (Tc)	560 mOhm @ 3.5A, 10V	4V @ 240µA	14.5nC @ 10V	380pF @ 300V	10V	±30V
	TK50P04M1(T6RSS-Q)	RFQ VIEW	PDF RFQ	770 In-stock	Toshiba Semiconductor and Storage	MOSFET N-CH 40V 50A DP TO252-3		U-MOSVI-H	Active	Cut Tape (CT)	MOSFET (Metal Oxide)	150°C (TJ)	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	DP	60W (Tc)	N-Channel	-	40V	50A (Ta)	8.7 mOhm @ 25A, 10V	2.3V @ 500µA	38nC @ 10V	2600pF @ 10V	4.5V, 10V	±20V
	TK560P60Y,RQ	RFQ VIEW	PDF RFQ	2,095 In-stock	Toshiba Semiconductor and Storage	MOSFET N-CHANNEL 600V 7A DPAK		DTMOSV	Active	Cut Tape (CT)	MOSFET (Metal Oxide)	150°C (TJ)	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	DPAK	60W (Tc)	N-Channel	-	600V	7A (Tc)	560 mOhm @ 3.5A, 10V	4V @ 240µA	14.5nC @ 10V	380pF @ 300V	10V	±30V
	TK7P65W,RQ	RFQ VIEW	PDF RFQ	2,864 In-stock	Toshiba Semiconductor and Storage	MOSFET N-CH 650V 6.8A DPAK		DTMOSIV	Active	Cut Tape (CT)	MOSFET (Metal Oxide)	150°C (TJ)	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	DPAK	60W (Tc)	N-Channel	-	650V	6.8A (Ta)	800 mOhm @ 3.4A, 10V	3.5V @ 250µA	15nC @ 10V	490pF @ 300V	10V	±30V

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