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- Part Status :
- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
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- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
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7 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
3,696
In-stock
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Toshiba Semiconductor and Storage | MOSFET P-CH 12V 4A UF6 | U-MOSIV | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 6-SMD, Flat Leads | UF6 | 500mW (Ta) | P-Channel | - | 12V | 4A (Ta) | 54 mOhm @ 2A, 2.5V | 1V @ 1mA | - | 1700pF @ 10V | 1.5V, 2.5V | ±8V | |||
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VIEW |
2,763
In-stock
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Toshiba Semiconductor and Storage | MOSFET P-CH 20V 9.5A UF6 | U-MOSV | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 6-SMD, Flat Leads | UF6 | 1W (Ta) | P-Channel | - | 20V | 9.5A (Ta) | 22.1 mOhm @ 3A, 4.5V | 1V @ 1mA | 15nC @ 4.5V | 1100pF @ 10V | 1.5V, 4.5V | ±8V | |||
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VIEW |
1,474
In-stock
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Toshiba Semiconductor and Storage | X34 PB-F UF6 S-MOS (LF) TRANSIST | U-MOSIV | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C | Surface Mount | 6-SMD, Flat Leads | UF6 | 500mW (Ta) | P-Channel | - | 20V | 2.5A (Ta) | 64 mOhm @ 1.5A, 4.5V | 1.2V @ 200µA | - | 800pF @ 10V | 2V, 4.5V | ±10V | |||
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VIEW |
1,451
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 20V 10A | U-MOSIV | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 6-SMD, Flat Leads | UF6 | 1W (Ta) | N-Channel | - | 20V | 10A (Ta) | 12 mOhm @ 7A, 4.5V | 1.2V @ 1mA | 9.4nC @ 4.5V | 710pF @ 10V | 2.5V, 4.5V | ±12V | |||
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VIEW |
727
In-stock
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Toshiba Semiconductor and Storage | MOSFET P CH 20V 6A UF6 | U-MOSVI | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 6-SMD, Flat Leads | UF6 | 1W (Ta) | P-Channel | - | 20V | 6A (Ta) | 22.5 mOhm @ 6A, 4.5V | 1V @ 1mA | 23.1nC @ 4.5V | 1650pF @ 10V | 1.5V, 4.5V | ±8V | |||
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VIEW |
1,940
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 20V 4.2A | U-MOSIII | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 6-SMD, Flat Leads | UF6 | 500mW (Ta) | N-Channel | - | 20V | 4.2A (Ta) | 28 mOhm @ 3A, 4V | 1V @ 1mA | 16.8nC @ 4V | 1050pF @ 10V | 1.5V, 4V | ±10V | |||
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VIEW |
812
In-stock
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Toshiba Semiconductor and Storage | SMALL-SIGNAL PCH MOSFET UMOSVI | U-MOSVI | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 6-SMD, Flat Leads | 6-TSOP-F | 1.5W (Ta) | P-Channel | - | 20V | 6A (Ta) | 32.5 mOhm @ 3A, 4.5V | 1V @ 1mA | 12.8nC @ 4.5V | 840pF @ 10V | 1.5V, 4.5V | +6V, -8V |