Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Vgs(th) (Max) @ Id Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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TPW1R306PL,L1Q
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Toshiba Semiconductor and Storage X35 PB-F POWER MOSFET TRANSISTOR U-MOSIX-H Active Digi-Reel® MOSFET (Metal Oxide) Surface Mount 8-PowerVDFN 8-DSOP Advance 960mW (Ta), 170W (Tc) N-Channel 60V 260A (Tc) - 4.5V, 10V ±20V
TPW1R306PL,L1Q
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1,971
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Toshiba Semiconductor and Storage X35 PB-F POWER MOSFET TRANSISTOR U-MOSIX-H Active Cut Tape (CT) MOSFET (Metal Oxide) Surface Mount 8-PowerVDFN 8-DSOP Advance 960mW (Ta), 170W (Tc) N-Channel 60V 260A (Tc) - 4.5V, 10V ±20V
TPW1R306PL,L1Q
RFQ
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RFQ
752
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Toshiba Semiconductor and Storage X35 PB-F POWER MOSFET TRANSISTOR U-MOSIX-H Active Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount 8-PowerVDFN 8-DSOP Advance 960mW (Ta), 170W (Tc) N-Channel 60V 260A (Tc) - 4.5V, 10V ±20V