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Picture	Mfr Part #	QUANTITY		Inventory	MANUFACTURE	Description	Package	Series	Part Status	Packaging	Technology	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package	Power Dissipation (Max)	FET Type	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)
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	2SK3566(STA4,Q,M)	RFQ VIEW	PDF RFQ	3,977 In-stock	Toshiba Semiconductor and Storage	MOSFET N-CH 900V 2.5A TO-220SIS		π-MOSIV	Active	Tube	MOSFET (Metal Oxide)	150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220SIS	40W (Tc)	N-Channel	900V	2.5A (Ta)	6.4 Ohm @ 1.5A, 10V	4V @ 1mA	12nC @ 10V	470pF @ 25V	10V	±30V
	2SK3564(STA4,Q,M)	RFQ VIEW	PDF RFQ	967 In-stock	Toshiba Semiconductor and Storage	MOSFET N-CH 900V 3A TO-220SIS		π-MOSIV	Active	Tube	MOSFET (Metal Oxide)	150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220SIS	40W (Tc)	N-Channel	900V	3A (Ta)	4.3 Ohm @ 1.5A, 10V	4V @ 1mA	17nC @ 10V	700pF @ 25V	10V	±30V
	2SK2845(TE16L1,Q)	RFQ VIEW	PDF RFQ	3,102 In-stock	Toshiba Semiconductor and Storage	MOSFET N-CH 900V 1A DP		-	Obsolete	Tape & Reel (TR)	MOSFET (Metal Oxide)	150°C (TJ)	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	DP	40W (Tc)	N-Channel	900V	1A (Ta)	9 Ohm @ 500mA, 10V	4V @ 1mA	15nC @ 10V	350pF @ 25V	10V	±30V
	2SK3565(Q,M)	RFQ VIEW	PDF RFQ	1,767 In-stock	Toshiba Semiconductor and Storage	MOSFET N-CH 900V 5A TO-220SIS		π-MOSIV	Active	Tube	MOSFET (Metal Oxide)	150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220SIS	45W (Tc)	N-Channel	900V	5A (Ta)	2.5 Ohm @ 3A, 10V	4V @ 1mA	28nC @ 10V	1150pF @ 25V	10V	±30V
	2SK2847(F)	RFQ VIEW	PDF RFQ	3,943 In-stock	Toshiba Semiconductor and Storage	MOSFET N-CH 900V 8A TO-3PN		-	Obsolete	Tube	MOSFET (Metal Oxide)	150°C (TJ)	Through Hole	TO-3P-3, SC-65-3	TO-3P(N)IS	85W (Tc)	N-Channel	900V	8A (Ta)	1.4 Ohm @ 4A, 10V	4V @ 1mA	58nC @ 10V	2040pF @ 25V	10V	±30V
	2SK2719(F)	RFQ VIEW	PDF RFQ	3,478 In-stock	Toshiba Semiconductor and Storage	MOSFET N-CH 900V 3A TO-3PN		-	Obsolete	Tube	MOSFET (Metal Oxide)	150°C (TJ)	Through Hole	TO-3P-3, SC-65-3	TO-3P(N)	125W (Tc)	N-Channel	900V	3A (Ta)	4.3 Ohm @ 1.5A, 10V	4V @ 1mA	25nC @ 10V	750pF @ 25V	10V	±30V
	TK7J90E,S1E	RFQ VIEW	PDF RFQ	961 In-stock	Toshiba Semiconductor and Storage	MOSFET N-CH 900V TO-3PN		π-MOSVIII	Active	Tube	MOSFET (Metal Oxide)	150°C (TJ)	Through Hole	TO-3P-3, SC-65-3	TO-3P(N)	200W (Tc)	N-Channel	900V	7A (Ta)	2 Ohm @ 3.5A, 10V	4V @ 700µA	32nC @ 10V	1350pF @ 25V	10V	±30V
	TK9A90E,S4X	RFQ VIEW	PDF RFQ	3,677 In-stock	Toshiba Semiconductor and Storage	MOSFET N-CH 900V TO220SIS		π-MOSVIII	Active	Tube	MOSFET (Metal Oxide)	150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220SIS	50W (Tc)	N-Channel	900V	9A (Ta)	1.3 Ohm @ 4.5A, 10V	4V @ 900µA	46nC @ 10V	2000pF @ 25V	10V	±30V
	TK7A90E,S4X	RFQ VIEW	PDF RFQ	1,980 In-stock	Toshiba Semiconductor and Storage	MOSFET N-CH 900V TO220SIS		π-MOSVIII	Active	Tube	MOSFET (Metal Oxide)	150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220SIS	45W (Tc)	N-Channel	900V	7A (Ta)	2 Ohm @ 3.5A, 10V	4V @ 700µA	32nC @ 10V	1350pF @ 25V	10V	±30V
	TK9J90E,S1E	RFQ VIEW	PDF RFQ	3,303 In-stock	Toshiba Semiconductor and Storage	MOSFET N-CH 900V TO-3PN		-	Active	Tube	MOSFET (Metal Oxide)	150°C (TJ)	Through Hole	TO-3P-3, SC-65-3	TO-3P(N)	250W (Tc)	N-Channel	900V	9A (Ta)	1.3 Ohm @ 4.5A, 10V	4V @ 900µA	46nC @ 10V	2000pF @ 25V	10V	±30V

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