Supplier Device Package :
Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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2SJ380(F)
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Toshiba Semiconductor and Storage MOSFET P-CH 100V 12A TO220NIS - Obsolete Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220NIS 35W (Tc) P-Channel 100V 12A (Ta) 210 mOhm @ 6A, 10V 2V @ 1mA 48nC @ 10V 1100pF @ 10V 4V, 10V ±20V
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Toshiba Semiconductor and Storage MOSFET N-CH 60V 45A TO220FL - Obsolete Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3, Short Tab TO-220FL 100W (Tc) N-Channel 60V 45A (Ta) 17 mOhm @ 25A, 10V 2V @ 1mA 110nC @ 10V 3350pF @ 10V 4V, 10V ±20V