- Series :
- Part Status :
- Operating Temperature :
- Package / Case :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Input Capacitance (Ciss) (Max) @ Vds :
- Applied Filters :
2 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GLOBAL STOCKS | |||||||||||||||||||||||||
VIEW |
2,792
In-stock
|
Toshiba Semiconductor and Storage | X35 PB-F POWER MOSFET TRANSISTOR | U-MOSIX-H | Active | - | MOSFET (Metal Oxide) | 175°C | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 2.67W (Ta), 104W (Tc) | N-Channel | 45V | 139A (Ta), 80A (Tc) | 2.8 mOhm @ 40A, 10V | 2.4V @ 300µA | 39nC @ 10V | 3.2nF @ 22.5V | 4.5V, 10V | ±20V | ||||
VIEW |
889
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 30V 11A SOP8 2-6J1B | - | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-SOIC (0.173", 4.40mm Width) | 8-SOP (5.5x6.0) | 1W (Ta) | N-Channel | 30V | 11A (Ta) | 14 mOhm @ 5.5A, 10V | 2.5V @ 1mA | 39nC @ 10V | 1860pF @ 10V | 4.5V, 10V | ±20V |