Operating Temperature :
Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Input Capacitance (Ciss) (Max) @ Vds :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
TPCA8016-H(TE12LQM
RFQ
VIEW
RFQ
3,959
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 60V 25A 8-SOPA - Obsolete Digi-Reel® MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-SOP Advance (5x5) 1.6W (Ta), 45W (Tc) N-Channel - 60V 25A (Ta) 21 mOhm @ 13A, 10V 2.3V @ 1mA 22nC @ 10V 1375pF @ 10V 4.5V, 10V ±20V
TPH7R006PL,L1Q
RFQ
VIEW
RFQ
1,201
In-stock
Toshiba Semiconductor and Storage X35 PB-F POWER MOSFET TRANSISTOR U-MOSIX-H Active Digi-Reel® MOSFET (Metal Oxide) 175°C (TJ) Surface Mount 8-PowerVDFN 8-SOP Advance (5x5) 81W (Tc) N-Channel - 60V 60A (Tc) 13.5 mOhm @ 10A, 4.5V 2.5V @ 200µA 22nC @ 10V 1875pF @ 30V 4.5V, 10V ±20V
TPH7R006PL,L1Q
RFQ
VIEW
RFQ
3,549
In-stock
Toshiba Semiconductor and Storage X35 PB-F POWER MOSFET TRANSISTOR U-MOSIX-H Active Cut Tape (CT) MOSFET (Metal Oxide) 175°C (TJ) Surface Mount 8-PowerVDFN 8-SOP Advance (5x5) 81W (Tc) N-Channel - 60V 60A (Tc) 13.5 mOhm @ 10A, 4.5V 2.5V @ 200µA 22nC @ 10V 1875pF @ 30V 4.5V, 10V ±20V
TPH7R006PL,L1Q
RFQ
VIEW
RFQ
850
In-stock
Toshiba Semiconductor and Storage X35 PB-F POWER MOSFET TRANSISTOR U-MOSIX-H Active Tape & Reel (TR) MOSFET (Metal Oxide) 175°C (TJ) Surface Mount 8-PowerVDFN 8-SOP Advance (5x5) 81W (Tc) N-Channel - 60V 60A (Tc) 13.5 mOhm @ 10A, 4.5V 2.5V @ 200µA 22nC @ 10V 1875pF @ 30V 4.5V, 10V ±20V