- Package / Case :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
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2 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
1,937
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 40V 7.5A SOP8 2-6J1B | - | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-SOIC (0.173", 4.40mm Width) | 8-SOP (5.5x6.0) | 1W (Ta) | N-Channel | - | 40V | 7.5A (Ta) | 27 mOhm @ 3.8A, 10V | 2.3V @ 1mA | 11nC @ 10V | 650pF @ 10V | 4.5V, 10V | ±20V | |||
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VIEW |
3,435
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 40V 3.9A VS6 2-3T1A | U-MOSIII-H | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | VS-6 (2.9x2.8) | 700mW (Ta) | N-Channel | - | 40V | 3.9A (Ta) | 75 mOhm @ 1.9A, 10V | 2.3V @ 1mA | 4.4nC @ 10V | 251pF @ 10V | 4.5V, 10V | ±20V |