- Series :
- Part Status :
- Supplier Device Package :
- Power Dissipation (Max) :
- FET Feature :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
-
- 12.2 mOhm @ 17.5A, 10V (2)
- 250 mOhm @ 6.5A, 10V (1)
- 290 mOhm @ 5.8A, 10V (2)
- 300 mOhm @ 5.8A, 10V (2)
- 340 mOhm @ 5.8A, 10V (1)
- 390 mOhm @ 5.5A, 10V (1)
- 4.3 Ohm @ 1.5A, 10V (1)
- 450 mOhm @ 4.9A, 10V (1)
- 460 mOhm @ 6.5A, 10V (1)
- 520 mOhm @ 6A, 10V (1)
- 580 mOhm @ 6A, 10V (1)
- 630 mOhm @ 5.5A, 10V (1)
- 750 mOhm @ 5A, 10V (1)
- Vgs(th) (Max) @ Id :
- Input Capacitance (Ciss) (Max) @ Vds :
- Applied Filters :
16 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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GLOBAL STOCKS | ||||||||||||||||||||||||||
VIEW |
3,156
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N CH 600V 11.5A IPAK | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-251-3 Stub Leads, IPak | I-PAK | 100W (Tc) | N-Channel | Super Junction | 600V | 11.5A (Ta) | 340 mOhm @ 5.8A, 10V | 3.7V @ 600µA | 25nC @ 10V | 890pF @ 300V | 10V | ±30V | ||||
VIEW |
1,697
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 250V 13A TO-220AB | - | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 | 102W (Tc) | N-Channel | - | 250V | 13A (Ta) | 250 mOhm @ 6.5A, 10V | 3.5V @ 1mA | 25nC @ 10V | 1100pF @ 100V | 10V | ±20V | ||||
VIEW |
3,257
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 10A TO220SIS | π-MOSVII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 45W (Tc) | N-Channel | - | 600V | 10A (Ta) | 750 mOhm @ 5A, 10V | 4V @ 1mA | 25nC @ 10V | 1350pF @ 25V | 10V | ±30V | ||||
VIEW |
2,105
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N CH 600V 11.5A TO-220SIS | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 35W (Tc) | N-Channel | Super Junction | 600V | 11.5A (Ta) | 300 mOhm @ 5.8A, 10V | 3.7V @ 600µA | 25nC @ 10V | 890pF @ 300V | 10V | ±30V | ||||
VIEW |
2,382
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 550V 11A TO-220SIS | π-MOSVII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 45W (Tc) | N-Channel | - | 550V | 11A (Ta) | 630 mOhm @ 5.5A, 10V | 4V @ 1mA | 25nC @ 10V | 1350pF @ 25V | 10V | ±30V | ||||
VIEW |
1,985
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 525V 12A TO-220SIS | π-MOSVII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 45W (Tc) | N-Channel | - | 525V | 12A (Ta) | 580 mOhm @ 6A, 10V | 4V @ 1mA | 25nC @ 10V | 1350pF @ 25V | 10V | ±30V | ||||
VIEW |
1,003
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 450V 13A TO-220SIS | π-MOSVII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 45W (Tc) | N-Channel | - | 450V | 13A (Ta) | 460 mOhm @ 6.5A, 10V | 4V @ 1mA | 25nC @ 10V | 1350pF @ 25V | 10V | ±30V | ||||
VIEW |
1,291
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 80V 55A TO-220 | U-MOSVIII-H | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 | TO-220 | 72W (Tc) | N-Channel | - | 80V | 55A (Tc) | 12.2 mOhm @ 17.5A, 10V | 4V @ 300µA | 25nC @ 10V | 1700pF @ 40V | 10V | ±20V | ||||
VIEW |
2,648
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 500V 12A TO-220SIS | π-MOSVII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 45W (Tc) | N-Channel | - | 500V | 12A (Ta) | 520 mOhm @ 6A, 10V | 4V @ 1mA | 25nC @ 10V | 1350pF @ 25V | 10V | ±30V | ||||
VIEW |
3,500
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 80V 35A TO-220 | U-MOSVIII-H | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 30W (Tc) | N-Channel | - | 80V | 35A (Tc) | 12.2 mOhm @ 17.5A, 10V | 4V @ 300µA | 25nC @ 10V | 1700pF @ 40V | 10V | ±20V | ||||
VIEW |
3,478
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 900V 3A TO-3PN | - | Obsolete | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | TO-3P(N) | 125W (Tc) | N-Channel | - | 900V | 3A (Ta) | 4.3 Ohm @ 1.5A, 10V | 4V @ 1mA | 25nC @ 10V | 750pF @ 25V | 10V | ±30V | ||||
VIEW |
1,870
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 650V 11.1A TO-220 | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 35W (Tc) | N-Channel | - | 650V | 11.1A (Ta) | 390 mOhm @ 5.5A, 10V | 3.5V @ 450µA | 25nC @ 10V | 890pF @ 300V | 10V | ±30V | ||||
VIEW |
2,351
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 11.5A TO220SIS | DTMOSV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 35W (Tc) | N-Channel | - | 600V | 11.5A (Tc) | 290 mOhm @ 5.8A, 10V | 4V @ 450µA | 25nC @ 10V | 730pF @ 300V | 10V | ±30V | ||||
VIEW |
2,175
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 650V 11.5A TO220SIS | DTMOSV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 35W (Tc) | N-Channel | - | 650V | 11.5A (Tc) | 290 mOhm @ 5.8A, 10V | 4V @ 450µA | 25nC @ 10V | 730pF @ 300V | 10V | ±30V | ||||
VIEW |
1,344
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N CH 600V 11.5A TO-220 | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 | TO-220 | 110W (Tc) | N-Channel | Super Junction | 600V | 11.5A (Ta) | 300 mOhm @ 5.8A, 10V | 3.7V @ 600µA | 25nC @ 10V | 890pF @ 300V | 10V | ±30V | ||||
VIEW |
2,192
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 9.7A TO-220SIS | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 30W (Tc) | N-Channel | - | 600V | 9.7A (Ta) | 450 mOhm @ 4.9A, 10V | 4.5V @ 500µA | 25nC @ 10V | 720pF @ 300V | 10V | ±30V |