- Operating Temperature :
- Supplier Device Package :
- FET Feature :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
-
- 1 Ohm @ 2.9A, 10V (1)
- 1.2 Ohm @ 2.6A, 10V (1)
- 1.75 Ohm @ 2.3A, 10V (1)
- 1.9 Ohm @ 1.9A, 10V (1)
- 10.4 mOhm @ 20A, 10V (1)
- 12.2 mOhm @ 17.5A, 10V (1)
- 13.8 mOhm @ 11A, 10V (1)
- 13.8 mOhm @ 16A, 10V (1)
- 2 Ohm @ 2A, 10V (1)
- 2.45 Ohm @ 1.8A, 10V (1)
- 2.8 Ohm @ 1.3A, 10V (2)
- 3.26 Ohm @ 1A, 10V (1)
- 380 mOhm @ 4.9A, 10V (2)
- 450 mOhm @ 4.9A, 10V (1)
- 500 mOhm @ 4.6A, 10V (1)
- 500 mOhm @ 4A, 10V (1)
- 540 mOhm @ 4A, 10V (1)
- 600 mOhm @ 3.5A, 10V (1)
- 650 mOhm @ 3.5A, 10V (1)
- 650 mOhm @ 3.9A, 10V (1)
- 750 mOhm @ 3.1A, 10V (1)
- 780 mOhm @ 3.4A, 10V (1)
- 900 mOhm @ 2.7A, 10V (1)
- Vgs(th) (Max) @ Id :
- Input Capacitance (Ciss) (Max) @ Vds :
- Applied Filters :
25 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GLOBAL STOCKS | ||||||||||||||||||||||||||
VIEW |
1,573
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 550V 3.5A TO-220SIS | π-MOSVII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 30W (Tc) | N-Channel | - | 550V | 3.5A (Ta) | 2.45 Ohm @ 1.8A, 10V | 4.4V @ 1mA | 9nC @ 10V | 380pF @ 25V | 10V | ±30V | ||||
VIEW |
2,452
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 500V 4A TO-220SIS | π-MOSVII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 30W (Tc) | N-Channel | - | 500V | 4A (Ta) | 2 Ohm @ 2A, 10V | 4.4V @ 1mA | 9nC @ 10V | 380pF @ 25V | 10V | ±30V | ||||
VIEW |
2,384
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N CH 600V 6.2A TO-220SIS | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 30W (Tc) | N-Channel | Super Junction | 600V | 6.2A (Ta) | 750 mOhm @ 3.1A, 10V | 3.7V @ 310µA | 12nC @ 10V | 390pF @ 300V | 10V | ±30V | ||||
VIEW |
621
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 2.5A TO-220SIS | π-MOSVII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 30W (Tc) | N-Channel | - | 600V | 2.5A (Ta) | 2.8 Ohm @ 1.3A, 10V | 4.4V @ 1mA | 9nC @ 10V | 380pF @ 25V | 10V | ±30V | ||||
VIEW |
808
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N CH 600V 9.7A TO-220 | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | - | Through Hole | TO-220-3 Full Pack | TO-220 | 30W (Tc) | N-Channel | - | 600V | 9.7A (Ta) | 380 mOhm @ 4.9A, 10V | 3.7V @ 500µA | 20nC @ 10V | 720pF @ 300V | 10V | ±30V | ||||
VIEW |
774
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N CH 600V 7A TO-220SIS | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 30W (Tc) | N-Channel | Super Junction | 600V | 7A (Ta) | 600 mOhm @ 3.5A, 10V | 3.7V @ 350µA | 15nC @ 10V | 490pF @ 300V | 10V | ±30V | ||||
VIEW |
1,492
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N CH 600V 8A TO-220SIS | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 30W (Tc) | N-Channel | Super Junction | 600V | 8A (Ta) | 500 mOhm @ 4A, 10V | 3.7V @ 400µA | 18.5nC @ 10V | 570pF @ 300V | 10V | ±30V | ||||
VIEW |
2,783
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 450V 4.5A TO-220SIS | π-MOSVII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 30W (Tc) | N-Channel | - | 450V | 4.5A (Ta) | 1.75 Ohm @ 2.3A, 10V | 4.4V @ 1mA | 9nC @ 10V | 380pF @ 25V | 10V | ±30V | ||||
VIEW |
3,500
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 80V 35A TO-220 | U-MOSVIII-H | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 30W (Tc) | N-Channel | - | 80V | 35A (Tc) | 12.2 mOhm @ 17.5A, 10V | 4V @ 300µA | 25nC @ 10V | 1700pF @ 40V | 10V | ±20V | ||||
VIEW |
2,129
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 2.5A TO-220SIS | π-MOSVII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 30W (Tc) | N-Channel | - | 600V | 2.5A (Ta) | 2.8 Ohm @ 1.3A, 10V | 4.4V @ 1mA | 9nC @ 10V | 380pF @ 25V | 10V | ±30V | ||||
VIEW |
1,466
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 100V 52A TO-220 | U-MOSVIII-H | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 30W (Tc) | N-Channel | - | 100V | 22A (Tc) | 13.8 mOhm @ 11A, 10V | 4V @ 300µA | 28nC @ 10V | 1800pF @ 50V | 10V | ±20V | ||||
VIEW |
3,098
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 120V 32A TO-220 | U-MOSVIII-H | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 30W (Tc) | N-Channel | - | 120V | 32A (Tc) | 13.8 mOhm @ 16A, 10V | 4V @ 500µA | 34nC @ 10V | 2000pF @ 60V | 10V | ±20V | ||||
VIEW |
1,319
In-stock
|
Toshiba Semiconductor and Storage | PB-F POWER MOSFET TRANSISTOR TO- | U-MOSIX | Active | Tube | MOSFET (Metal Oxide) | 150°C | Through Hole | TO-220-3 Full Pack | TO-220SIS | 30W (Tc) | N-Channel | - | 600V | 3.7A (Ta) | 1.9 Ohm @ 1.9A, 10V | 4V @ 400µA | 14nC @ 10V | 490pF @ 300V | 10V | ±30V | ||||
VIEW |
950
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 9.7A TO-220SIS | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 30W (Tc) | N-Channel | Super Junction | 600V | 9.7A (Ta) | 380 mOhm @ 4.9A, 10V | 3.7V @ 500µA | 20nC @ 10V | 700pF @ 300V | 10V | ±30V | ||||
VIEW |
2,647
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 650V 9.3A TO-220SIS | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 30W (Tc) | N-Channel | - | 650V | 9.3A (Ta) | 500 mOhm @ 4.6A, 10V | 3.5V @ 350µA | 20nC @ 10V | 700pF @ 300V | 10V | ±30V | ||||
VIEW |
1,939
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 650V 7.8A TO-220SIS | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 30W (Tc) | N-Channel | - | 650V | 7.8A (Ta) | 650 mOhm @ 3.9A, 10V | 3.5V @ 300µA | 16nC @ 10V | 570pF @ 300V | 10V | ±30V | ||||
VIEW |
1,948
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 650V 5.8A TO-220SIS | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 30W (Tc) | N-Channel | - | 650V | 5.8A (Ta) | 1 Ohm @ 2.9A, 10V | 3.5V @ 180µA | 11nC @ 10V | 390pF @ 300V | 10V | ±30V | ||||
VIEW |
3,857
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 650V 6.8A TO-220SIS | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 30W (Tc) | N-Channel | - | 650V | 6.8A (Ta) | 780 mOhm @ 3.4A, 10V | 3.5V @ 250µA | 15nC @ 10V | 490pF @ 300V | 10V | ±30V | ||||
VIEW |
3,543
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 650V 2A TO-220SIS | π-MOSVII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 30W (Tc) | N-Channel | - | 650V | 2A (Ta) | 3.26 Ohm @ 1A, 10V | 4.4V @ 1mA | 9nC @ 10V | 380pF @ 25V | 10V | ±30V | ||||
VIEW |
3,434
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 7A TO-220SIS | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 30W (Tc) | N-Channel | - | 600V | 7A (Ta) | 650 mOhm @ 3.5A, 10V | 4.5V @ 350µA | 16nC @ 10V | 490pF @ 300V | 10V | ±30V | ||||
VIEW |
870
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 60V 60A TO220SIS | U-MOSVIII-H | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 30W (Tc) | N-Channel | - | 60V | 40A (Tc) | 10.4 mOhm @ 20A, 10V | 4V @ 300µA | 23nC @ 10V | 1700pF @ 30V | 10V | ±20V | ||||
VIEW |
1,318
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N CH 600V 5.4A TO-220SIS | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 30W (Tc) | N-Channel | Super Junction | 600V | 5.4A (Ta) | 900 mOhm @ 2.7A, 10V | 3.7V @ 270µA | 10.5nC @ 10V | 380pF @ 300V | 10V | ±30V | ||||
VIEW |
2,192
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 9.7A TO-220SIS | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 30W (Tc) | N-Channel | - | 600V | 9.7A (Ta) | 450 mOhm @ 4.9A, 10V | 4.5V @ 500µA | 25nC @ 10V | 720pF @ 300V | 10V | ±30V | ||||
VIEW |
3,842
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 8A TO-220SIS | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 30W (Tc) | N-Channel | - | 600V | 8A (Ta) | 540 mOhm @ 4A, 10V | 4.5V @ 400µA | 22nC @ 10V | 590pF @ 300V | 10V | ±30V | ||||
VIEW |
2,768
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 650V 5.2A TO-220SIS | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 30W (Tc) | N-Channel | - | 650V | 5.2A (Ta) | 1.2 Ohm @ 2.6A, 10V | 3.5V @ 170µA | 10.5nC @ 10V | 380pF @ 300V | 10V | ±30V |