- Series :
- Part Status :
- Operating Temperature :
- Supplier Device Package :
- FET Feature :
- Current - Continuous Drain (Id) @ 25°C :
-
- 100A (Ta) (3)
- 11.5A (Ta) (2)
- 13.7A (Ta) (2)
- 13A (Ta) (1)
- 148A (Ta) (1)
- 15.8A (Ta) (2)
- 17.3A (Ta) (1)
- 17A (Ta) (1)
- 20A (Ta) (1)
- 25A (Ta) (2)
- 30.8A (Ta) (2)
- 40A (Ta) (1)
- 43A (Ta) (1)
- 4A (Ta) (1)
- 52A (Tc) (1)
- 55A (Tc) (1)
- 56A (Ta) (1)
- 58A (Ta) (1)
- 6.5A (Ta) (1)
- 60A (Tc) (1)
- 72A (Ta) (2)
- 75A (Tc) (1)
- 80A (Tc) (1)
- 88A (Tc) (1)
- 9.7A (Ta) (1)
- 90A (Tc) (1)
- Rds On (Max) @ Id, Vgs :
-
- 10.4 mOhm @ 20A, 10V (1)
- 12.2 mOhm @ 17.5A, 10V (1)
- 125 mOhm @ 7.5A, 10V (1)
- 13.8 mOhm @ 11A, 10V (1)
- 13.8 mOhm @ 16A, 10V (1)
- 140 mOhm @ 7.5A, 10V (1)
- 15 mOhm @ 15A, 10V (1)
- 155 mOhm @ 10A, 10V (1)
- 190 mOhm @ 7.9A, 10V (1)
- 2.3 mOhm @ 50A, 10V (1)
- 200 mOhm @ 8.7A, 10V (1)
- 230 mOhm @ 7.9A, 10V (1)
- 250 mOhm @ 6.5A, 10V (1)
- 250 mOhm @ 6.9A, 10V (1)
- 290 mOhm @ 8.5A, 10V (1)
- 3.2 mOhm @ 50A, 10V (1)
- 3.4 mOhm @ 50A, 10V (1)
- 3.8 Ohm @ 2A, 10V (1)
- 300 mOhm @ 5.8A, 10V (1)
- 300 mOhm @ 6.9A, 10V (1)
- 380 mOhm @ 4.9A, 10V (1)
- 4.3 mOhm @ 36A, 10V (1)
- 4.4 mOhm @ 36A, 10V (1)
- 4.8 mOhm @ 32.5A, 10V (1)
- 450 mOhm @ 5.8A, 10V (1)
- 5.4 mOhm @ 29A, 10V (1)
- 7 mOhm @ 28A, 10V (1)
- 8.2 mOhm @ 20A, 10V (1)
- 8.4 mOhm @ 23A, 10V (1)
- 88 mOhm @ 15.4A, 10V (1)
- 88 mOhm @ 9.4A, 10V (1)
- 9.4 mOhm @ 21A, 10V (1)
- 9.5 mOhm @ 17A, 10V (1)
- 950 mOhm @ 3.3A, 10V (1)
- Vgs(th) (Max) @ Id :
-
- 3.5V @ 1.2mA (1)
- 3.5V @ 1.5mA (1)
- 3.5V @ 1mA (2)
- 3.5V @ 690µA (1)
- 3.5V @ 900µA (1)
- 3.7V @ 1.5mA (1)
- 3.7V @ 1mA (1)
- 3.7V @ 500µA (1)
- 3.7V @ 600µA (1)
- 3.7V @ 790µA (1)
- 4.5V @ 1.2mA (1)
- 4.5V @ 690µA (1)
- 4.5V @ 790µA (1)
- 4V @ 1mA (8)
- 4V @ 200µA (1)
- 4V @ 280µA (1)
- 4V @ 300µA (3)
- 4V @ 500µA (5)
- 4V @ 570µA (1)
- 4V @ 850µA (1)
- Gate Charge (Qg) (Max) @ Vgs :
-
- 130nC @ 10V (2)
- 13nC @ 10V (1)
- 140nC @ 10V (2)
- 16nC @ 10V (1)
- 20nC @ 10V (1)
- 23nC @ 10V (2)
- 25nC @ 10V (3)
- 28nC @ 10V (1)
- 32nC @ 10V (1)
- 34nC @ 10V (1)
- 35nC @ 10V (1)
- 37nC @ 10V (1)
- 38nC @ 10V (2)
- 40nC @ 10V (2)
- 43nC @ 10V (1)
- 45nC @ 10V (1)
- 46nC @ 10V (1)
- 48nC @ 10V (1)
- 49nC @ 10V (1)
- 52nC @ 10V (1)
- 60nC @ 10V (2)
- 65nC @ 10V (1)
- 69nC @ 10V (1)
- 81nC @ 10V (2)
- 86nC @ 10V (1)
- Input Capacitance (Ciss) (Max) @ Vds :
-
- 10500pF @ 30V (1)
- 1050pF @ 30V (1)
- 1100pF @ 100V (1)
- 1300pF @ 300V (2)
- 1350pF @ 300V (2)
- 1400pF @ 300V (1)
- 1680pF @ 300V (1)
- 1700pF @ 30V (1)
- 1700pF @ 40V (1)
- 1800pF @ 300V (1)
- 1800pF @ 50V (1)
- 2000pF @ 60V (1)
- 2050pF @ 300V (1)
- 2400pF @ 300V (2)
- 2500pF @ 40V (1)
- 2600pF @ 50V (1)
- 3000pF @ 300V (2)
- 3000pF @ 50V (1)
- 3100pF @ 60V (1)
- 3400pF @ 30V (1)
- 4200pF @ 60V (1)
- 5400pF @ 50V (1)
- 5500pF @ 40V (1)
- 700pF @ 25V (1)
- 700pF @ 300V (2)
- 8100pF @ 60V (1)
- 8800pF @ 50V (1)
- 890pF @ 300V (1)
- 9000pF @ 40V (1)
- Applied Filters :
34 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GLOBAL STOCKS | ||||||||||||||||||||||||||
VIEW |
2,563
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 80V 80A TO-220 | U-MOSVIII-H | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 | TO-220 | 103W (Tc) | N-Channel | - | 80V | 80A (Tc) | 8.4 mOhm @ 23A, 10V | 4V @ 500µA | 37nC @ 10V | 2500pF @ 40V | 10V | ±20V | ||||
VIEW |
3,388
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N CH 120V 88A TO-220 | U-MOSVIII-H | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 | TO-220 | 140W (Tc) | N-Channel | - | 120V | 88A (Tc) | 9.4 mOhm @ 21A, 10V | 4V @ 1mA | 52nC @ 10V | 3100pF @ 60V | 10V | ±20V | ||||
VIEW |
2,164
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 1000V 4A TO-220AB | - | Obsolete | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 100W (Tc) | N-Channel | - | 1000V | 4A (Ta) | 3.8 Ohm @ 2A, 10V | 3.5V @ 1mA | 60nC @ 10V | 700pF @ 25V | 10V | ±20V | ||||
VIEW |
2,908
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N CH 600V 30.8A TO-220 | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 | TO-220 | 230W (Tc) | N-Channel | Super Junction | 600V | 30.8A (Ta) | 88 mOhm @ 15.4A, 10V | 3.7V @ 1.5mA | 86nC @ 10V | 3000pF @ 300V | 10V | ±30V | ||||
VIEW |
1,697
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 250V 13A TO-220AB | - | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 | 102W (Tc) | N-Channel | - | 250V | 13A (Ta) | 250 mOhm @ 6.5A, 10V | 3.5V @ 1mA | 25nC @ 10V | 1100pF @ 100V | 10V | ±20V | ||||
VIEW |
911
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 15.8A TO-220AB | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 | TO-220 | 130W (Tc) | N-Channel | - | 600V | 15.8A (Ta) | 230 mOhm @ 7.9A, 10V | 4.5V @ 790µA | 43nC @ 10V | 1350pF @ 300V | 10V | ±30V | ||||
VIEW |
1,796
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 20A TO-220 | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 | TO-220 | 165W (Tc) | N-Channel | - | 600V | 20A (Ta) | 155 mOhm @ 10A, 10V | 3.7V @ 1mA | 48nC @ 10V | 1680pF @ 300V | 10V | ±30V | ||||
VIEW |
891
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N CH 120V 56A TO-220 | U-MOSVIII-H | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 | TO-220 | 168W (Tc) | N-Channel | - | 120V | 56A (Ta) | 7 mOhm @ 28A, 10V | 4V @ 1mA | 69nC @ 10V | 4200pF @ 60V | 10V | ±20V | ||||
VIEW |
2,644
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N CH 120V 72A TO-220 | U-MOSVIII-H | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 | 255W (Tc) | N-Channel | - | 120V | 72A (Ta) | 4.4 mOhm @ 36A, 10V | 4V @ 1mA | 130nC @ 10V | 8100pF @ 60V | 10V | ±20V | ||||
VIEW |
1,291
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 80V 55A TO-220 | U-MOSVIII-H | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 | TO-220 | 72W (Tc) | N-Channel | - | 80V | 55A (Tc) | 12.2 mOhm @ 17.5A, 10V | 4V @ 300µA | 25nC @ 10V | 1700pF @ 40V | 10V | ±20V | ||||
VIEW |
1,091
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 30.8A TO-220 | DTMOSIV-H | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 | TO-220 | 230W (Tc) | N-Channel | Super Junction | 600V | 30.8A (Ta) | 88 mOhm @ 9.4A, 10V | 3.5V @ 1.5mA | 65nC @ 10V | 3000pF @ 300V | 10V | ±30V | ||||
VIEW |
800
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 650V 13.7A TO-220 | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 | TO-220 | 130W (Tc) | N-Channel | - | 650V | 13.7A (Ta) | 250 mOhm @ 6.9A, 10V | 3.5V @ 690µA | 35nC @ 10V | 1300pF @ 300V | 10V | ±30V | ||||
VIEW |
2,123
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 100V 75A TO-220 | U-MOSVIII-H | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 | TO-220 | 103W (Tc) | N-Channel | - | 100V | 75A (Tc) | 9.5 mOhm @ 17A, 10V | 4V @ 500µA | 38nC @ 10V | 2600pF @ 50V | 10V | ±20V | ||||
VIEW |
1,601
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N CH 120V 60A TO-220 | U-MOSVIII-H | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 | TO-220 | 98W (Tc) | N-Channel | - | 120V | 60A (Tc) | 13.8 mOhm @ 16A, 10V | 4V @ 500µA | 34nC @ 10V | 2000pF @ 60V | 10V | ±20V | ||||
VIEW |
2,633
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N CH 100V 52A TO220 | U-MOSVIII-H | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 | TO-220 | 72W (Tc) | N-Channel | - | 100V | 52A (Tc) | 13.8 mOhm @ 11A, 10V | 4V @ 300µA | 28nC @ 10V | 1800pF @ 50V | 10V | ±20V | ||||
VIEW |
2,694
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N CH 600V 15.8A TO-220 | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 | TO-220 | 130W (Tc) | N-Channel | Super Junction | 600V | 15.8A (Ta) | 190 mOhm @ 7.9A, 10V | 3.7V @ 790µA | 38nC @ 10V | 1350pF @ 300V | 10V | ±30V | ||||
VIEW |
1,344
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N CH 600V 11.5A TO-220 | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 | TO-220 | 110W (Tc) | N-Channel | Super Junction | 600V | 11.5A (Ta) | 300 mOhm @ 5.8A, 10V | 3.7V @ 600µA | 25nC @ 10V | 890pF @ 300V | 10V | ±30V | ||||
VIEW |
1,389
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 25A TO-220AB | DTMOSIV-H | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 | TO-220 | 180W (Tc) | N-Channel | - | 600V | 25A (Ta) | 140 mOhm @ 7.5A, 10V | 4.5V @ 1.2mA | 60nC @ 10V | 2400pF @ 300V | 10V | ±30V | ||||
VIEW |
759
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 800V 6.5A TO220 | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C | Through Hole | TO-220-3 | TO-220 | 110W (Tc) | N-Channel | - | 800V | 6.5A (Ta) | 950 mOhm @ 3.3A, 10V | 4V @ 280µA | 13nC @ 10V | 700pF @ 300V | 10V | ±20V | ||||
VIEW |
2,779
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N CH 60V 58A TO-220 | U-MOSVIII-H | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 | TO-220 | 110W (Tc) | N-Channel | - | 60V | 58A (Ta) | 5.4 mOhm @ 29A, 10V | 4V @ 500µA | 46nC @ 10V | 3400pF @ 30V | 10V | ±20V | ||||
VIEW |
1,839
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 60V 43A TO-220 | U-MOSVIII-H | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 | TO-220 | 53W (Tc) | N-Channel | - | 60V | 43A (Ta) | 15 mOhm @ 15A, 10V | 4V @ 200µA | 16nC @ 10V | 1050pF @ 30V | 10V | ±20V | ||||
VIEW |
3,209
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N CH 60V 40A TO-220 | U-MOSVIII-H | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 | TO-220 | 67W (Tc) | N-Channel | - | 60V | 40A (Ta) | 10.4 mOhm @ 20A, 10V | 4V @ 300µA | 23nC @ 10V | 1700pF @ 30V | 10V | ±20V | ||||
VIEW |
3,227
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 100V 100A TO220 | U-MOSVIII-H | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 | TO-220 | 255W (Tc) | N-Channel | - | 100V | 100A (Ta) | 3.4 mOhm @ 50A, 10V | 4V @ 1mA | 140nC @ 10V | 8800pF @ 50V | 10V | ±20V | ||||
VIEW |
2,337
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 650V 17.3A TO-220AB | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 | TO-220 | 165W (Tc) | N-Channel | - | 650V | 17.3A (Ta) | 200 mOhm @ 8.7A, 10V | 3.5V @ 900µA | 45nC @ 10V | 1800pF @ 300V | 10V | ±30V | ||||
VIEW |
2,962
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 80V 100A TO220 | U-MOSVIII-H | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 | TO-220 | 255W (Tc) | N-Channel | - | 80V | 100A (Ta) | 3.2 mOhm @ 50A, 10V | 4V @ 1mA | 130nC @ 10V | 9000pF @ 40V | 10V | ±20V | ||||
VIEW |
2,027
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N CH 100V 148A TO220 | U-MOSVIII-H | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 | TO-220 | 192W (Tc) | N-Channel | - | 100V | 148A (Ta) | 4.8 mOhm @ 32.5A, 10V | 4V @ 1mA | 81nC @ 10V | 5400pF @ 50V | 10V | ±20V | ||||
VIEW |
1,531
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 25A TO-220AB | DTMOSIV-H | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 | TO-220 | 180W (Tc) | N-Channel | - | 600V | 25A (Ta) | 125 mOhm @ 7.5A, 10V | 3.5V @ 1.2mA | 40nC @ 10V | 2400pF @ 300V | 10V | ±30V | ||||
VIEW |
3,848
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 650V 13.7A TO-220AB | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 | TO-220 | 130W (Tc) | N-Channel | - | 650V | 13.7A (Ta) | 300 mOhm @ 6.9A, 10V | 4.5V @ 690µA | 40nC @ 10V | 1300pF @ 300V | 10V | ±30V | ||||
VIEW |
3,760
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N CH 600V 9.7A TO-220 | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 | TO-220 | 100W (Tc) | N-Channel | Super Junction | 600V | 9.7A (Ta) | 380 mOhm @ 4.9A, 10V | 3.7V @ 500µA | 20nC @ 10V | 700pF @ 300V | 10V | ±30V | ||||
VIEW |
1,498
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N CH 60V 100A TO-220 | U-MOSVIII-H | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 | TO-220 | 255W (Tc) | N-Channel | - | 60V | 100A (Ta) | 2.3 mOhm @ 50A, 10V | 4V @ 1mA | 140nC @ 10V | 10500pF @ 30V | 10V | ±20V |