- Series :
- Part Status :
- Packaging :
- Mounting Type :
- Supplier Device Package :
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- Current - Continuous Drain (Id) @ 25°C :
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8 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
1,043
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 500V 12A TO220NIS | - | Obsolete | Bulk | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220NIS | 40W (Tc) | N-Channel | - | 500V | 12A (Ta) | 620 mOhm @ 6A, 10V | 4V @ 1mA | 45nC @ 10V | 2040pF @ 10V | 10V | ±30V | |||
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VIEW |
1,644
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 600V 10A TO-220AB | - | Obsolete | Bulk | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 125W (Tc) | N-Channel | - | 600V | 10A (Ta) | 750 mOhm @ 5A, 10V | 4V @ 1mA | 45nC @ 10V | 2040pF @ 10V | 10V | ±30V | |||
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VIEW |
1,273
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 500V 12A TO220SM | - | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-220SM | 100W (Tc) | N-Channel | - | 500V | 12A (Ta) | 520 mOhm @ 6A, 10V | 4V @ 1mA | 45nC @ 10V | 2040pF @ 10V | 10V | ±30V | |||
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VIEW |
1,654
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 450V 19A TO-220SIS | π-MOSVII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 50W (Tc) | N-Channel | - | 450V | 19A (Ta) | 250 mOhm @ 9.5A, 10V | 4V @ 1mA | 45nC @ 10V | 2600pF @ 25V | 10V | ±30V | |||
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VIEW |
2,310
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 500V 18A TO-220SIS | π-MOSVII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 50W (Tc) | N-Channel | - | 500V | 18A (Ta) | 270 mOhm @ 9A, 10V | 4V @ 1mA | 45nC @ 10V | 2600pF @ 25V | 10V | ±30V | |||
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VIEW |
2,070
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 600V 15A TO-220SIS | π-MOSVII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 50W (Tc) | N-Channel | - | 600V | 15A (Ta) | 370 mOhm @ 7.5A, 10V | 4V @ 1mA | 45nC @ 10V | 2600pF @ 25V | 10V | ±30V | |||
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VIEW |
2,337
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 650V 17.3A TO-220AB | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 | TO-220 | 165W (Tc) | N-Channel | - | 650V | 17.3A (Ta) | 200 mOhm @ 8.7A, 10V | 3.5V @ 900µA | 45nC @ 10V | 1800pF @ 300V | 10V | ±30V | |||
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VIEW |
2,536
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 650V 17.3A T0247 | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-247-3 | TO-247 | 165W (Tc) | N-Channel | - | 650V | 17.3A (Ta) | 200 mOhm @ 8.7A, 10V | 3.5V @ 900µA | 45nC @ 10V | 1800pF @ 300V | 10V | ±30V |