- Part Status :
- Package / Case :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Input Capacitance (Ciss) (Max) @ Vds :
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4 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
1,873
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 600V 20A TO-3PN | - | Obsolete | Bulk | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | TO-3P(N) | 150W (Tc) | N-Channel | - | 600V | 20A (Ta) | 330 mOhm @ 10A, 10V | 4V @ 1mA | 60nC @ 10V | 4250pF @ 25V | 10V | ±30V | |||
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VIEW |
1,389
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 600V 25A TO-220AB | DTMOSIV-H | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 | TO-220 | 180W (Tc) | N-Channel | - | 600V | 25A (Ta) | 140 mOhm @ 7.5A, 10V | 4.5V @ 1.2mA | 60nC @ 10V | 2400pF @ 300V | 10V | ±30V | |||
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VIEW |
719
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 600V 25A TO-220SIS | DTMOSIV-H | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 45W (Tc) | N-Channel | - | 600V | 25A (Ta) | 140 mOhm @ 7.5A, 10V | 4.5V @ 1.2mA | 60nC @ 10V | 2400pF @ 300V | 10V | ±30V | |||
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VIEW |
2,939
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 600V 25A TO247 | DTMOSIV-H | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-247-3 | TO-247 | 180W (Tc) | N-Channel | - | 600V | 25A (Ta) | 140 mOhm @ 7.5A, 10V | 4.5V @ 1.2mA | 60nC @ 10V | 2400pF @ 300V | 10V | ±30V |