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Picture	Mfr Part #	QUANTITY		Inventory	MANUFACTURE	Description	Package	Series	Part Status	Packaging	Technology	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package	Power Dissipation (Max)	FET Type	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)
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	2SK3906(Q)	RFQ VIEW	PDF RFQ	1,873 In-stock	Toshiba Semiconductor and Storage	MOSFET N-CH 600V 20A TO-3PN		-	Obsolete	Bulk	MOSFET (Metal Oxide)	150°C (TJ)	Through Hole	TO-3P-3, SC-65-3	TO-3P(N)	150W (Tc)	N-Channel	-	600V	20A (Ta)	330 mOhm @ 10A, 10V	4V @ 1mA	60nC @ 10V	4250pF @ 25V	10V	±30V
	TK25E60X5,S1X	RFQ VIEW	PDF RFQ	1,389 In-stock	Toshiba Semiconductor and Storage	MOSFET N-CH 600V 25A TO-220AB		DTMOSIV-H	Active	Tube	MOSFET (Metal Oxide)	150°C (TJ)	Through Hole	TO-220-3	TO-220	180W (Tc)	N-Channel	-	600V	25A (Ta)	140 mOhm @ 7.5A, 10V	4.5V @ 1.2mA	60nC @ 10V	2400pF @ 300V	10V	±30V
	TK25A60X5,S5X	RFQ VIEW	PDF RFQ	719 In-stock	Toshiba Semiconductor and Storage	MOSFET N-CH 600V 25A TO-220SIS		DTMOSIV-H	Active	Tube	MOSFET (Metal Oxide)	150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220SIS	45W (Tc)	N-Channel	-	600V	25A (Ta)	140 mOhm @ 7.5A, 10V	4.5V @ 1.2mA	60nC @ 10V	2400pF @ 300V	10V	±30V
	TK25N60X5,S1F	RFQ VIEW	PDF RFQ	2,939 In-stock	Toshiba Semiconductor and Storage	MOSFET N-CH 600V 25A TO247		DTMOSIV-H	Active	Tube	MOSFET (Metal Oxide)	150°C (TJ)	Through Hole	TO-247-3	TO-247	180W (Tc)	N-Channel	-	600V	25A (Ta)	140 mOhm @ 7.5A, 10V	4.5V @ 1.2mA	60nC @ 10V	2400pF @ 300V	10V	±30V

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