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8 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
1,016
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 600V 6A TO-220AB | - | Obsolete | Bulk | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 80W (Tc) | N-Channel | - | 600V | 6A (Ta) | 1.25 Ohm @ 3A, 10V | 4V @ 1mA | 30nC @ 10V | 1300pF @ 10V | 10V | ±30V | |||
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VIEW |
2,160
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 525V 6A DPAK-3 | π-MOSVII | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 100W (Tc) | N-Channel | - | 525V | 6A (Ta) | 1.3 Ohm @ 3A, 10V | 4.4V @ 1mA | 12nC @ 10V | 600pF @ 25V | 10V | ±30V | |||
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VIEW |
816
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 500V 6A TO-220SIS | π-MOSVII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 35W (Tc) | N-Channel | - | 500V | 6A (Ta) | 1.4 Ohm @ 3A, 10V | 4.4V @ 1mA | 11nC @ 10V | 540pF @ 25V | 10V | ±30V | |||
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VIEW |
1,337
In-stock
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Toshiba Semiconductor and Storage | PB-F POWER MOSFET TRANSISTOR TO- | U-MOSIX | Active | Tube | MOSFET (Metal Oxide) | 150°C | Through Hole | TO-220-3 Full Pack | TO-220SIS | 35W (Tc) | N-Channel | - | 600V | 6A (Ta) | 1.2 Ohm @ 3A, 10V | 4V @ 630µA | 21nC @ 10V | 740pF @ 300V | 10V | ±30V | |||
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VIEW |
1,864
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 525V 6A TO-220SIS | π-MOSVII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 35W (Tc) | N-Channel | - | 525V | 6A (Ta) | 1.3 Ohm @ 3A, 10V | 4.4V @ 1mA | 12nC @ 10V | 600pF @ 25V | 10V | ±30V | |||
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VIEW |
3,062
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 650V 5A TO-220SIS | π-MOSVII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 45W (Tc) | N-Channel | - | 650V | 6A (Ta) | 1.11 Ohm @ 3A, 10V | 4V @ 1mA | 20nC @ 10V | 1050pF @ 25V | 10V | ±30V | |||
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VIEW |
3,537
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 800V TO220SIS | π-MOSVIII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 45W (Tc) | N-Channel | - | 800V | 6A (Ta) | 1.7 Ohm @ 3A, 10V | 4V @ 600µA | 32nC @ 10V | 1350pF @ 25V | 10V | ±30V | |||
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VIEW |
662
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 600V 6A TO220SIS | π-MOSVII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 40W (Tc) | N-Channel | - | 600V | 6A (Ta) | 1.25 Ohm @ 3A, 10V | 4V @ 1mA | 16nC @ 10V | 800pF @ 25V | 10V | ±30V |