Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
2SK3868(Q,M)
RFQ
VIEW
RFQ
2,315
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 500V 5A TO220SIS - Obsolete Bulk MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220SIS 35W (Tc) N-Channel 500V 5A (Ta) 1.7 Ohm @ 2.5A, 10V 4V @ 1mA 16nC @ 10V 550pF @ 25V 10V ±30V