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Picture	Mfr Part #	QUANTITY		Inventory	MANUFACTURE	Description	Package	Series	Part Status	Packaging	Technology	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package	Power Dissipation (Max)	FET Type	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)
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	TK10J80E,S1E	RFQ VIEW	PDF RFQ	2,566 In-stock	Toshiba Semiconductor and Storage	MOSFET N-CH 800V TO-3PN		π-MOSVIII	Active	Tube	MOSFET (Metal Oxide)	150°C (TJ)	Through Hole	TO-3P-3, SC-65-3	TO-3P(N)	250W (Tc)	N-Channel	800V	10A (Ta)	1 Ohm @ 5A, 10V	4V @ 1mA	46nC @ 10V	2000pF @ 25V	10V	±30V
	TK10A80E,S4X	RFQ VIEW	PDF RFQ	1,256 In-stock	Toshiba Semiconductor and Storage	MOSFET N-CH 800V TO220SIS		π-MOSVIII	Active	Tube	MOSFET (Metal Oxide)	150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220SIS	50W (Tc)	N-Channel	800V	10A (Ta)	1 Ohm @ 5A, 10V	4V @ 1mA	46nC @ 10V	2000pF @ 25V	10V	±30V
	TK9A90E,S4X	RFQ VIEW	PDF RFQ	3,677 In-stock	Toshiba Semiconductor and Storage	MOSFET N-CH 900V TO220SIS		π-MOSVIII	Active	Tube	MOSFET (Metal Oxide)	150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220SIS	50W (Tc)	N-Channel	900V	9A (Ta)	1.3 Ohm @ 4.5A, 10V	4V @ 900µA	46nC @ 10V	2000pF @ 25V	10V	±30V
	TK9J90E,S1E	RFQ VIEW	PDF RFQ	3,303 In-stock	Toshiba Semiconductor and Storage	MOSFET N-CH 900V TO-3PN		-	Active	Tube	MOSFET (Metal Oxide)	150°C (TJ)	Through Hole	TO-3P-3, SC-65-3	TO-3P(N)	250W (Tc)	N-Channel	900V	9A (Ta)	1.3 Ohm @ 4.5A, 10V	4V @ 900µA	46nC @ 10V	2000pF @ 25V	10V	±30V

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