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Picture	Mfr Part #	QUANTITY		Inventory	MANUFACTURE	Description	Package	Series	Part Status	Packaging	Technology	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package	Power Dissipation (Max)	FET Type	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)
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	TK12A45D(STA4,Q,M)	RFQ VIEW	PDF RFQ	3,840 In-stock	Toshiba Semiconductor and Storage	MOSFET N-CH 450V 12A TO-220SIS		π-MOSVII	Active	Tube	MOSFET (Metal Oxide)	150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220SIS	45W (Tc)	N-Channel	-	450V	12A (Ta)	520 mOhm @ 6A, 10V	4V @ 1mA	24nC @ 10V	1200pF @ 25V	10V	±30V
	TK7A65D(STA4,Q,M)	RFQ VIEW	PDF RFQ	912 In-stock	Toshiba Semiconductor and Storage	MOSFET N-CH 650V 7A TO-220SIS		π-MOSVII	Active	Tube	MOSFET (Metal Oxide)	150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220SIS	45W (Tc)	N-Channel	-	650V	7A (Ta)	980 mOhm @ 3.5A, 10V	4V @ 1mA	24nC @ 10V	1200pF @ 25V	10V	±30V
	TK11A50D(STA4,Q,M)	RFQ VIEW	PDF RFQ	3,504 In-stock	Toshiba Semiconductor and Storage	MOSFET N-CH 500V 11A TO-220SIS		π-MOSVII	Active	Tube	MOSFET (Metal Oxide)	150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220SIS	45W (Tc)	N-Channel	-	500V	11A (Ta)	600 mOhm @ 5.5A, 10V	4V @ 1mA	24nC @ 10V	1200pF @ 25V	10V	±30V
	TK9A60D(STA4,Q,M)	RFQ VIEW	PDF RFQ	670 In-stock	Toshiba Semiconductor and Storage	MOSFET N-CH 600V 9A TO-220SIS		π-MOSVII	Active	Tube	MOSFET (Metal Oxide)	150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220SIS	45W (Tc)	N-Channel	-	600V	9A (Ta)	830 mOhm @ 4.5A, 10V	4V @ 1mA	24nC @ 10V	1200pF @ 25V	10V	±30V
	TK10A55D(STA4,Q,M)	RFQ VIEW	PDF RFQ	2,444 In-stock	Toshiba Semiconductor and Storage	MOSFET N-CH 550V 10A TO-220SIS		π-MOSVII	Active	Tube	MOSFET (Metal Oxide)	150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220SIS	45W (Tc)	N-Channel	-	550V	10A (Ta)	720 mOhm @ 5A, 10V	4V @ 1mA	24nC @ 10V	1200pF @ 25V	10V	±30V

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