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Picture	Mfr Part #	QUANTITY		Inventory	MANUFACTURE	Description	Package	Series	Part Status	Packaging	Technology	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package	Power Dissipation (Max)	FET Type	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)
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	2SK3564(STA4,Q,M)	RFQ VIEW	PDF RFQ	967 In-stock	Toshiba Semiconductor and Storage	MOSFET N-CH 900V 3A TO-220SIS		π-MOSIV	Active	Tube	MOSFET (Metal Oxide)	150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220SIS	40W (Tc)	N-Channel	-	900V	3A (Ta)	4.3 Ohm @ 1.5A, 10V	4V @ 1mA	17nC @ 10V	700pF @ 25V	10V	±30V
	2SK1119(F)	RFQ VIEW	PDF RFQ	2,164 In-stock	Toshiba Semiconductor and Storage	MOSFET N-CH 1000V 4A TO-220AB		-	Obsolete	Tube	MOSFET (Metal Oxide)	150°C (TJ)	Through Hole	TO-220-3	TO-220AB	100W (Tc)	N-Channel	-	1000V	4A (Ta)	3.8 Ohm @ 2A, 10V	3.5V @ 1mA	60nC @ 10V	700pF @ 25V	10V	±20V
	TK8A50DA(STA4,Q,M)	RFQ VIEW	PDF RFQ	3,200 In-stock	Toshiba Semiconductor and Storage	MOSFET N-CH 500V 7.5A TO-220SIS		π-MOSVII	Active	Tube	MOSFET (Metal Oxide)	150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220SIS	35W (Tc)	N-Channel	-	500V	7.5A (Ta)	1.04 Ohm @ 3.8A, 10V	4.4V @ 1mA	16nC @ 10V	700pF @ 25V	10V	±30V
	TK8A45D(STA4,Q,M)	RFQ VIEW	PDF RFQ	643 In-stock	Toshiba Semiconductor and Storage	MOSFET N-CH 450V 8A TO-220SIS		π-MOSVII	Active	Tube	MOSFET (Metal Oxide)	150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220SIS	35W (Tc)	N-Channel	-	450V	8A (Ta)	900 mOhm @ 4A, 10V	4.4V @ 1mA	16nC @ 10V	700pF @ 25V	10V	±30V
	TK7A55D(STA4,Q,M)	RFQ VIEW	PDF RFQ	3,033 In-stock	Toshiba Semiconductor and Storage	MOSFET N-CH 550V 7A TO-220SIS		π-MOSVII	Active	Tube	MOSFET (Metal Oxide)	150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220SIS	35W (Tc)	N-Channel	-	550V	7A (Ta)	1.25 Ohm @ 3.5A, 10V	4.4V @ 1mA	16nC @ 10V	700pF @ 25V	10V	±30V
	TK5A65DA(STA4,Q,M)	RFQ VIEW	PDF RFQ	3,275 In-stock	Toshiba Semiconductor and Storage	MOSFET N-CH 650V 4.5A TO-220SIS		π-MOSVII	Active	Tube	MOSFET (Metal Oxide)	150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220SIS	35W (Tc)	N-Channel	-	650V	4.5A (Ta)	1.67 Ohm @ 2.3A, 10V	4.4V @ 1mA	16nC @ 10V	700pF @ 25V	10V	±30V
	TK5A60D(STA4,Q,M)	RFQ VIEW	PDF RFQ	2,879 In-stock	Toshiba Semiconductor and Storage	MOSFET N-CH 600V 5A TO-220SIS		π-MOSVII	Active	Tube	MOSFET (Metal Oxide)	150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220SIS	35W (Tc)	N-Channel	-	600V	5A (Ta)	1.43 Ohm @ 2.5A, 10V	4.4V @ 1mA	16nC @ 10V	700pF @ 25V	10V	±30V

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