Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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TK20A25D,S5Q(M
RFQ
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RFQ
2,724
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 250V 20A TO-220SIS π-MOSVII Obsolete Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220SIS 45W (Tc) N-Channel - 250V 20A (Ta) 100 mOhm @ 10A, 10V 3.5V @ 1mA 55nC @ 10V 2550pF @ 100V 10V ±20V
TK20N60W5,S1VF
RFQ
VIEW
RFQ
2,618
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 600V 20A TO-247 DTMOSIV Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-247-3 TO-247 165W (Tc) N-Channel - 600V 20A (Ta) 175 mOhm @ 10A, 10V 4.5V @ 1mA 55nC @ 10V 1800pF @ 300V 10V ±30V
TK20V60W5,LVQ
RFQ
VIEW
RFQ
2,974
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 600V 20A 5DFN DTMOSIV Active Digi-Reel® MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 4-VSFN Exposed Pad 4-DFN-EP (8x8) 156W (Tc) N-Channel - 600V 20A (Ta) 190 mOhm @ 10A, 10V 4.5V @ 1mA 55nC @ 10V 1800pF @ 300V 10V ±30V
TK20V60W5,LVQ
RFQ
VIEW
RFQ
3,815
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 600V 20A 5DFN DTMOSIV Active Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 4-VSFN Exposed Pad 4-DFN-EP (8x8) 156W (Tc) N-Channel - 600V 20A (Ta) 190 mOhm @ 10A, 10V 4.5V @ 1mA 55nC @ 10V 1800pF @ 300V 10V ±30V
TK20V60W5,LVQ
RFQ
VIEW
RFQ
2,212
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 600V 20A 5DFN DTMOSIV Active Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 4-VSFN Exposed Pad 4-DFN-EP (8x8) 156W (Tc) N-Channel - 600V 20A (Ta) 190 mOhm @ 10A, 10V 4.5V @ 1mA 55nC @ 10V 1800pF @ 300V 10V ±30V
TK20A60W5,S5VX
RFQ
VIEW
RFQ
1,148
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 600V 20A TO-220 DTMOSIV Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220SIS 45W (Tc) N-Channel - 600V 20A (Ta) 175 mOhm @ 10A, 10V 4.5V @ 1mA 55nC @ 10V 1800pF @ 300V 10V ±30V