Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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2SK3462(TE16L1,NQ)
RFQ
VIEW
RFQ
913
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 250V 3A PW-MOLD - Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 PW-MOLD 20W (Tc) N-Channel - 250V 3A (Ta) 1.7 Ohm @ 1.5A, 10V 3.5V @ 1mA 12nC @ 10V 267pF @ 10V 10V ±20V
TK7P50D(T6RSS-Q)
RFQ
VIEW
RFQ
670
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 500V 7A DPAK-3 π-MOSVII Active Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 D-Pak 100W (Tc) N-Channel - 500V 7A (Ta) 1.22 Ohm @ 3.5A, 10V 4.4V @ 1mA 12nC @ 10V 600pF @ 25V 10V ±30V
TK6P53D(T6RSS-Q)
RFQ
VIEW
RFQ
2,160
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 525V 6A DPAK-3 π-MOSVII Active Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 D-Pak 100W (Tc) N-Channel - 525V 6A (Ta) 1.3 Ohm @ 3A, 10V 4.4V @ 1mA 12nC @ 10V 600pF @ 25V 10V ±30V
TK6P60W,RVQ
RFQ
VIEW
RFQ
3,954
In-stock
Toshiba Semiconductor and Storage MOSFET N CH 600V 6.2A DPAK DTMOSIV Discontinued at Digi-Key Digi-Reel® MOSFET (Metal Oxide) 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 DPAK 60W (Tc) N-Channel Super Junction 600V 6.2A (Ta) 820 mOhm @ 3.1A, 10V 3.7V @ 310µA 12nC @ 10V 390pF @ 300V 10V ±30V
TK6P60W,RVQ
RFQ
VIEW
RFQ
2,270
In-stock
Toshiba Semiconductor and Storage MOSFET N CH 600V 6.2A DPAK DTMOSIV Discontinued at Digi-Key Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 DPAK 60W (Tc) N-Channel Super Junction 600V 6.2A (Ta) 820 mOhm @ 3.1A, 10V 3.7V @ 310µA 12nC @ 10V 390pF @ 300V 10V ±30V
TK6P60W,RVQ
RFQ
VIEW
RFQ
616
In-stock
Toshiba Semiconductor and Storage MOSFET N CH 600V 6.2A DPAK DTMOSIV Active Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 DPAK 60W (Tc) N-Channel Super Junction 600V 6.2A (Ta) 820 mOhm @ 3.1A, 10V 3.7V @ 310µA 12nC @ 10V 390pF @ 300V 10V ±30V