- Package / Case :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
-
- 1.04 Ohm @ 3.8A, 10V (1)
- 1.2 Ohm @ 3.3A, 10V (1)
- 1.22 Ohm @ 3.5A, 10V (1)
- 1.25 Ohm @ 3.5A, 10V (1)
- 1.3 Ohm @ 3A, 10V (1)
- 1.35 Ohm @ 2.8A, 10V (1)
- 1.4 Ohm @ 3A, 10V (1)
- 1.43 Ohm @ 2.5A, 10V (1)
- 1.48 Ohm @ 2.8A, 10V (1)
- 1.5 Ohm @ 2.5A, 10V (2)
- 1.67 Ohm @ 2.3A, 10V (1)
- 1.7 Ohm @ 2.5A, 10V (1)
- 1.7 Ohm @ 2A, 10V (2)
- 1.75 Ohm @ 2.3A, 10V (1)
- 1.88 Ohm @ 2A, 10V (1)
- 1.9 Ohm @ 1.8A, 10V (1)
- 2 Ohm @ 1.9A, 10V (1)
- 2 Ohm @ 2A, 10V (1)
- 2.2 Ohm @ 1.8A, 10V (1)
- 2.25 Ohm @ 1.5A, 10V (1)
- 2.45 Ohm @ 1.8A, 10V (1)
- 2.51 Ohm @ 1.3A, 10V (1)
- 2.8 Ohm @ 1.3A, 10V (2)
- 3.26 Ohm @ 1A, 10V (1)
- 4.3 Ohm @ 1A, 10V (1)
- 900 mOhm @ 4A, 10V (1)
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Applied Filters :
29 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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GLOBAL STOCKS | ||||||||||||||||||||||||||
VIEW |
3,460
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 650V 3.5A TO-220SIS | π-MOSVII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 35W (Tc) | N-Channel | - | 650V | 3.5A (Ta) | 1.9 Ohm @ 1.8A, 10V | 4.4V @ 1mA | 12nC @ 10V | 600pF @ 25V | 10V | ±30V | ||||
VIEW |
2,924
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 3.7A TO-220SIS | π-MOSVII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 35W (Tc) | N-Channel | - | 600V | 3.7A (Ta) | 2 Ohm @ 1.9A, 10V | 4.4V @ 1mA | 11nC @ 10V | 540pF @ 25V | 10V | ±30V | ||||
VIEW |
2,941
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 550V 4A TO-220SIS | π-MOSVII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 35W (Tc) | N-Channel | - | 550V | 4A (Ta) | 1.88 Ohm @ 2A, 10V | 4.4V @ 1mA | 11nC @ 10V | 490pF @ 25V | 10V | ±30V | ||||
VIEW |
1,573
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 550V 3.5A TO-220SIS | π-MOSVII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 30W (Tc) | N-Channel | - | 550V | 3.5A (Ta) | 2.45 Ohm @ 1.8A, 10V | 4.4V @ 1mA | 9nC @ 10V | 380pF @ 25V | 10V | ±30V | ||||
VIEW |
2,894
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 525V 4A TO-220SIS | π-MOSVII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 35W (Tc) | N-Channel | - | 525V | 4A (Ta) | 1.7 Ohm @ 2A, 10V | 4.4V @ 1mA | 11nC @ 10V | 490pF @ 25V | 10V | ±30V | ||||
VIEW |
2,452
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 500V 4A TO-220SIS | π-MOSVII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 30W (Tc) | N-Channel | - | 500V | 4A (Ta) | 2 Ohm @ 2A, 10V | 4.4V @ 1mA | 9nC @ 10V | 380pF @ 25V | 10V | ±30V | ||||
VIEW |
1,887
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 3.5A TO220SIS | π-MOSVII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | - | N-Channel | - | 600V | 3.5A (Ta) | 2.2 Ohm @ 1.8A, 10V | 4.4V @ 1mA | 11nC @ 10V | 490pF @ 25V | 10V | ±30V | ||||
VIEW |
621
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 2.5A TO-220SIS | π-MOSVII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 30W (Tc) | N-Channel | - | 600V | 2.5A (Ta) | 2.8 Ohm @ 1.3A, 10V | 4.4V @ 1mA | 9nC @ 10V | 380pF @ 25V | 10V | ±30V | ||||
VIEW |
2,783
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 450V 4.5A TO-220SIS | π-MOSVII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 30W (Tc) | N-Channel | - | 450V | 4.5A (Ta) | 1.75 Ohm @ 2.3A, 10V | 4.4V @ 1mA | 9nC @ 10V | 380pF @ 25V | 10V | ±30V | ||||
VIEW |
2,662
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 450V 6.5A TO-220SIS | π-MOSVII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 35W (Tc) | N-Channel | - | 450V | 6.5A (Ta) | 1.2 Ohm @ 3.3A, 10V | 4.4V @ 1mA | 11nC @ 10V | 540pF @ 25V | 10V | ±30V | ||||
VIEW |
3,671
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 550V 5A TO-220SIS | π-MOSVII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 35W (Tc) | N-Channel | - | 550V | 5A (Ta) | 1.7 Ohm @ 2.5A, 10V | 4.4V @ 1mA | 11nC @ 10V | 540pF @ 25V | 10V | ±30V | ||||
VIEW |
816
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 500V 6A TO-220SIS | π-MOSVII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 35W (Tc) | N-Channel | - | 500V | 6A (Ta) | 1.4 Ohm @ 3A, 10V | 4.4V @ 1mA | 11nC @ 10V | 540pF @ 25V | 10V | ±30V | ||||
VIEW |
2,952
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 525V 5A TO-220SIS | π-MOSVII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 35W (Tc) | N-Channel | - | 525V | 5A (Ta) | 1.5 Ohm @ 2.5A, 10V | 4.4V @ 1mA | 11nC @ 10V | 540pF @ 25V | 10V | ±30V | ||||
VIEW |
729
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 450V 5.5A TO-220SIS | π-MOSVII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | - | N-Channel | - | 450V | 5.5A (Ta) | 1.35 Ohm @ 2.8A, 10V | 4.4V @ 1mA | 11nC @ 10V | 490pF @ 25V | 10V | ±30V | ||||
VIEW |
2,292
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 500V 5A TO220SIS | π-MOSVII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 35W (Tc) | N-Channel | - | 500V | 5A (Ta) | 1.5 Ohm @ 2.5A, 10V | 4.4V @ 1mA | 11nC @ 10V | 490pF @ 25V | 10V | ±30V | ||||
VIEW |
1,118
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 2A PW-MOLD | π-MOSVII | Active | Bulk | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-251-3 Stub Leads, IPak | PW-MOLD2 | 60W (Tc) | N-Channel | - | 600V | 2A (Ta) | 4.3 Ohm @ 1A, 10V | 4.4V @ 1mA | 7nC @ 10V | 280pF @ 25V | 10V | ±30V | ||||
VIEW |
3,356
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 4A TO-220SIS | π-MOSVII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 35W (Tc) | N-Channel | - | 600V | 4A (Ta) | 1.7 Ohm @ 2A, 10V | 4.4V @ 1mA | 12nC @ 10V | 600pF @ 25V | 10V | ±30V | ||||
VIEW |
2,129
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 2.5A TO-220SIS | π-MOSVII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 30W (Tc) | N-Channel | - | 600V | 2.5A (Ta) | 2.8 Ohm @ 1.3A, 10V | 4.4V @ 1mA | 9nC @ 10V | 380pF @ 25V | 10V | ±30V | ||||
VIEW |
1,051
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 650V 3A TO-220SIS | π-MOSVII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 35W (Tc) | N-Channel | - | 650V | 3A (Ta) | 2.25 Ohm @ 1.5A, 10V | 4.4V @ 1mA | 11nC @ 10V | 540pF @ 25V | 10V | ±30V | ||||
VIEW |
3,200
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 500V 7.5A TO-220SIS | π-MOSVII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 35W (Tc) | N-Channel | - | 500V | 7.5A (Ta) | 1.04 Ohm @ 3.8A, 10V | 4.4V @ 1mA | 16nC @ 10V | 700pF @ 25V | 10V | ±30V | ||||
VIEW |
643
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 450V 8A TO-220SIS | π-MOSVII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 35W (Tc) | N-Channel | - | 450V | 8A (Ta) | 900 mOhm @ 4A, 10V | 4.4V @ 1mA | 16nC @ 10V | 700pF @ 25V | 10V | ±30V | ||||
VIEW |
3,033
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 550V 7A TO-220SIS | π-MOSVII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 35W (Tc) | N-Channel | - | 550V | 7A (Ta) | 1.25 Ohm @ 3.5A, 10V | 4.4V @ 1mA | 16nC @ 10V | 700pF @ 25V | 10V | ±30V | ||||
VIEW |
3,275
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 650V 4.5A TO-220SIS | π-MOSVII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 35W (Tc) | N-Channel | - | 650V | 4.5A (Ta) | 1.67 Ohm @ 2.3A, 10V | 4.4V @ 1mA | 16nC @ 10V | 700pF @ 25V | 10V | ±30V | ||||
VIEW |
2,879
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 5A TO-220SIS | π-MOSVII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 35W (Tc) | N-Channel | - | 600V | 5A (Ta) | 1.43 Ohm @ 2.5A, 10V | 4.4V @ 1mA | 16nC @ 10V | 700pF @ 25V | 10V | ±30V | ||||
VIEW |
821
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 650V 2.5A TO-220SIS | π-MOSVII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 35W (Tc) | N-Channel | - | 650V | 2.5A (Ta) | 2.51 Ohm @ 1.3A, 10V | 4.4V @ 1mA | 11nC @ 10V | 490pF @ 25V | 10V | ±30V | ||||
VIEW |
2,538
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 500V 7A TO-220SIS | π-MOSVII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 35W (Tc) | N-Channel | - | 500V | 7A (Ta) | 1.22 Ohm @ 3.5A, 10V | 4.4V @ 1mA | 12nC @ 10V | 600pF @ 25V | 10V | ±30V | ||||
VIEW |
1,864
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 525V 6A TO-220SIS | π-MOSVII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 35W (Tc) | N-Channel | - | 525V | 6A (Ta) | 1.3 Ohm @ 3A, 10V | 4.4V @ 1mA | 12nC @ 10V | 600pF @ 25V | 10V | ±30V | ||||
VIEW |
1,065
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 550V 5.5A TO-220SIS | π-MOSVII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 35W (Tc) | N-Channel | - | 550V | 5.5A (Ta) | 1.48 Ohm @ 2.8A, 10V | 4.4V @ 1mA | 12nC @ 10V | 600pF @ 25V | 10V | ±30V | ||||
VIEW |
3,543
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 650V 2A TO-220SIS | π-MOSVII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 30W (Tc) | N-Channel | - | 650V | 2A (Ta) | 3.26 Ohm @ 1A, 10V | 4.4V @ 1mA | 9nC @ 10V | 380pF @ 25V | 10V | ±30V |