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Picture	Mfr Part #	QUANTITY		Inventory	MANUFACTURE	Description	Package	Series	Part Status	Packaging	Technology	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package	Power Dissipation (Max)	FET Type	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)
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	2SK2866(F)	RFQ VIEW	PDF RFQ	1,644 In-stock	Toshiba Semiconductor and Storage	MOSFET N-CH 600V 10A TO-220AB		-	Obsolete	Bulk	MOSFET (Metal Oxide)	150°C (TJ)	Through Hole	TO-220-3	TO-220AB	125W (Tc)	N-Channel	600V	10A (Ta)	750 mOhm @ 5A, 10V	4V @ 1mA	45nC @ 10V	2040pF @ 10V	10V	±30V
	TK10A60D(STA4,Q,M)	RFQ VIEW	PDF RFQ	3,257 In-stock	Toshiba Semiconductor and Storage	MOSFET N-CH 600V 10A TO220SIS		π-MOSVII	Active	Tube	MOSFET (Metal Oxide)	150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220SIS	45W (Tc)	N-Channel	600V	10A (Ta)	750 mOhm @ 5A, 10V	4V @ 1mA	25nC @ 10V	1350pF @ 25V	10V	±30V
	TK750A60F,S4X	RFQ VIEW	PDF RFQ	1,243 In-stock	Toshiba Semiconductor and Storage	PB-F POWER MOSFET TRANSISTOR TO-		U-MOSIX	Active	Tube	MOSFET (Metal Oxide)	150°C	Through Hole	TO-220-3 Full Pack	TO-220SIS	40W (Tc)	N-Channel	600V	10A (Ta)	750 mOhm @ 5A, 10V	4V @ 1mA	30nC @ 10V	1130pF @ 300V	10V	±30V
	TK10A60E,S4X	RFQ VIEW	PDF RFQ	1,845 In-stock	Toshiba Semiconductor and Storage	MOSFET N-CH 600V TO220SIS		-	Active	Tube	MOSFET (Metal Oxide)	150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220SIS	45W (Tc)	N-Channel	600V	10A (Ta)	750 mOhm @ 5A, 10V	4V @ 1mA	40nC @ 10V	1300pF @ 25V	10V	±30V

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