Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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TK6A45DA(STA4,Q,M)
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RFQ
729
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Toshiba Semiconductor and Storage MOSFET N-CH 450V 5.5A TO-220SIS π-MOSVII Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220SIS - N-Channel - 450V 5.5A (Ta) 1.35 Ohm @ 2.8A, 10V 4.4V @ 1mA 11nC @ 10V 490pF @ 25V 10V ±30V
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RFQ
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RFQ
3,094
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 200V 5.5A SOP-8 ADV π-MOSV Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-SOP Advance (5x5) 1.6W (Ta), 45W (Tc) N-Channel - 200V 5.5A (Ta) 450 mOhm @ 2.7A, 10V 4V @ 1mA 10nC @ 10V 600pF @ 10V 10V ±20V
TPCA8010-H(TE12L,Q
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RFQ
2,072
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 200V 5.5A 8-SOPA π-MOSV Obsolete Digi-Reel® MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-SOP Advance (5x5) 1.6W (Ta), 45W (Tc) N-Channel - 200V 5.5A (Ta) 450 mOhm @ 2.7A, 10V 4V @ 1mA 10nC @ 10V 600pF @ 10V 10V ±20V
TPCA8010-H(TE12L,Q
RFQ
VIEW
RFQ
986
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 200V 5.5A 8-SOPA π-MOSV Obsolete Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-SOP Advance (5x5) 1.6W (Ta), 45W (Tc) N-Channel - 200V 5.5A (Ta) 450 mOhm @ 2.7A, 10V 4V @ 1mA 10nC @ 10V 600pF @ 10V 10V ±20V
TPCA8010-H(TE12L,Q
RFQ
VIEW
RFQ
1,312
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 200V 5.5A 8-SOPA π-MOSV Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-SOP Advance (5x5) 1.6W (Ta), 45W (Tc) N-Channel - 200V 5.5A (Ta) 450 mOhm @ 2.7A, 10V 4V @ 1mA 10nC @ 10V 600pF @ 10V 10V ±20V
TK6A55DA(STA4,Q,M)
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VIEW
RFQ
1,065
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 550V 5.5A TO-220SIS π-MOSVII Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220SIS 35W (Tc) N-Channel - 550V 5.5A (Ta) 1.48 Ohm @ 2.8A, 10V 4.4V @ 1mA 12nC @ 10V 600pF @ 25V 10V ±30V