Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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2SK2917(F)
RFQ
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RFQ
1,846
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 500V 18A TO-3PN - Obsolete Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-3P-3, SC-65-3 TO-3P(N)IS 90W (Tc) N-Channel - 500V 18A (Ta) 270 mOhm @ 10A, 10V 4V @ 1mA 80nC @ 10V 3720pF @ 10V 10V ±30V
TK18A50D(STA4,Q,M)
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RFQ
2,310
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 500V 18A TO-220SIS π-MOSVII Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220SIS 50W (Tc) N-Channel - 500V 18A (Ta) 270 mOhm @ 9A, 10V 4V @ 1mA 45nC @ 10V 2600pF @ 25V 10V ±30V
TPH3300CNH,L1Q
RFQ
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RFQ
2,188
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 150V 18A 8-SOP U-MOSVIII-H Active Digi-Reel® MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-SOP Advance (5x5) 1.6W (Ta), 57W (Tc) N-Channel - 150V 18A (Ta) 33 mOhm @ 9A, 10V 4V @ 300µA 10.6nC @ 10V 1100pF @ 75V 10V ±20V
TPH3300CNH,L1Q
RFQ
VIEW
RFQ
1,726
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 150V 18A 8-SOP U-MOSVIII-H Active Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-SOP Advance (5x5) 1.6W (Ta), 57W (Tc) N-Channel - 150V 18A (Ta) 33 mOhm @ 9A, 10V 4V @ 300µA 10.6nC @ 10V 1100pF @ 75V 10V ±20V
TPH3300CNH,L1Q
RFQ
VIEW
RFQ
2,921
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 150V 18A 8-SOP U-MOSVIII-H Active Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-SOP Advance (5x5) 1.6W (Ta), 57W (Tc) N-Channel - 150V 18A (Ta) 33 mOhm @ 9A, 10V 4V @ 300µA 10.6nC @ 10V 1100pF @ 75V 10V ±20V