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Picture	Mfr Part #	QUANTITY		Inventory	MANUFACTURE	Description	Package	Series	Part Status	Packaging	Technology	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package	Power Dissipation (Max)	FET Type	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)
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	TK4A53D(STA4,Q,M)	RFQ VIEW	PDF RFQ	2,894 In-stock	Toshiba Semiconductor and Storage	MOSFET N-CH 525V 4A TO-220SIS		π-MOSVII	Active	Tube	MOSFET (Metal Oxide)	150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220SIS	35W (Tc)	N-Channel	-	525V	4A (Ta)	1.7 Ohm @ 2A, 10V	4.4V @ 1mA	11nC @ 10V	490pF @ 25V	10V	±30V
	TK6P53D(T6RSS-Q)	RFQ VIEW	PDF RFQ	2,160 In-stock	Toshiba Semiconductor and Storage	MOSFET N-CH 525V 6A DPAK-3		π-MOSVII	Active	Tape & Reel (TR)	MOSFET (Metal Oxide)	150°C (TJ)	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	D-Pak	100W (Tc)	N-Channel	-	525V	6A (Ta)	1.3 Ohm @ 3A, 10V	4.4V @ 1mA	12nC @ 10V	600pF @ 25V	10V	±30V
	TK5P53D(T6RSS-Q)	RFQ VIEW	PDF RFQ	3,321 In-stock	Toshiba Semiconductor and Storage	MOSFET N-CH 525V 5A DPAK-3		-	Active	Tape & Reel (TR)	MOSFET (Metal Oxide)	150°C (TJ)	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	D-Pak	80W (Tc)	N-Channel	-	525V	5A (Ta)	1.5 Ohm @ 2.5A, 10V	4.4V @ 1mA	11nC @ 10V	540pF @ 25V	10V	±30V
	TK12A53D(STA4,Q,M)	RFQ VIEW	PDF RFQ	1,985 In-stock	Toshiba Semiconductor and Storage	MOSFET N-CH 525V 12A TO-220SIS		π-MOSVII	Active	Tube	MOSFET (Metal Oxide)	150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220SIS	45W (Tc)	N-Channel	-	525V	12A (Ta)	580 mOhm @ 6A, 10V	4V @ 1mA	25nC @ 10V	1350pF @ 25V	10V	±30V
	TK5A53D(STA4,Q,M)	RFQ VIEW	PDF RFQ	2,952 In-stock	Toshiba Semiconductor and Storage	MOSFET N-CH 525V 5A TO-220SIS		π-MOSVII	Active	Tube	MOSFET (Metal Oxide)	150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220SIS	35W (Tc)	N-Channel	-	525V	5A (Ta)	1.5 Ohm @ 2.5A, 10V	4.4V @ 1mA	11nC @ 10V	540pF @ 25V	10V	±30V
	TK6A53D(STA4,Q,M)	RFQ VIEW	PDF RFQ	1,864 In-stock	Toshiba Semiconductor and Storage	MOSFET N-CH 525V 6A TO-220SIS		π-MOSVII	Active	Tube	MOSFET (Metal Oxide)	150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220SIS	35W (Tc)	N-Channel	-	525V	6A (Ta)	1.3 Ohm @ 3A, 10V	4.4V @ 1mA	12nC @ 10V	600pF @ 25V	10V	±30V

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