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15 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW |
2,384
In-stock
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Toshiba Semiconductor and Storage | MOSFET N CH 600V 6.2A TO-220SIS | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 30W (Tc) | N-Channel | Super Junction | 600V | 6.2A (Ta) | 750 mOhm @ 3.1A, 10V | 3.7V @ 310µA | 12nC @ 10V | 390pF @ 300V | 10V | ±30V | |||
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VIEW |
621
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 600V 2.5A TO-220SIS | π-MOSVII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 30W (Tc) | N-Channel | - | 600V | 2.5A (Ta) | 2.8 Ohm @ 1.3A, 10V | 4.4V @ 1mA | 9nC @ 10V | 380pF @ 25V | 10V | ±30V | |||
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VIEW |
808
In-stock
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Toshiba Semiconductor and Storage | MOSFET N CH 600V 9.7A TO-220 | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | - | Through Hole | TO-220-3 Full Pack | TO-220 | 30W (Tc) | N-Channel | - | 600V | 9.7A (Ta) | 380 mOhm @ 4.9A, 10V | 3.7V @ 500µA | 20nC @ 10V | 720pF @ 300V | 10V | ±30V | |||
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VIEW |
774
In-stock
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Toshiba Semiconductor and Storage | MOSFET N CH 600V 7A TO-220SIS | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 30W (Tc) | N-Channel | Super Junction | 600V | 7A (Ta) | 600 mOhm @ 3.5A, 10V | 3.7V @ 350µA | 15nC @ 10V | 490pF @ 300V | 10V | ±30V | |||
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VIEW |
1,492
In-stock
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Toshiba Semiconductor and Storage | MOSFET N CH 600V 8A TO-220SIS | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 30W (Tc) | N-Channel | Super Junction | 600V | 8A (Ta) | 500 mOhm @ 4A, 10V | 3.7V @ 400µA | 18.5nC @ 10V | 570pF @ 300V | 10V | ±30V | |||
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VIEW |
2,129
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 600V 2.5A TO-220SIS | π-MOSVII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 30W (Tc) | N-Channel | - | 600V | 2.5A (Ta) | 2.8 Ohm @ 1.3A, 10V | 4.4V @ 1mA | 9nC @ 10V | 380pF @ 25V | 10V | ±30V | |||
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VIEW |
1,319
In-stock
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Toshiba Semiconductor and Storage | PB-F POWER MOSFET TRANSISTOR TO- | U-MOSIX | Active | Tube | MOSFET (Metal Oxide) | 150°C | Through Hole | TO-220-3 Full Pack | TO-220SIS | 30W (Tc) | N-Channel | - | 600V | 3.7A (Ta) | 1.9 Ohm @ 1.9A, 10V | 4V @ 400µA | 14nC @ 10V | 490pF @ 300V | 10V | ±30V | |||
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VIEW |
950
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 600V 9.7A TO-220SIS | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 30W (Tc) | N-Channel | Super Junction | 600V | 9.7A (Ta) | 380 mOhm @ 4.9A, 10V | 3.7V @ 500µA | 20nC @ 10V | 700pF @ 300V | 10V | ±30V | |||
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VIEW |
3,434
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 600V 7A TO-220SIS | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 30W (Tc) | N-Channel | - | 600V | 7A (Ta) | 650 mOhm @ 3.5A, 10V | 4.5V @ 350µA | 16nC @ 10V | 490pF @ 300V | 10V | ±30V | |||
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VIEW |
1,776
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CHANNEL 600V 9.7A DPAK | DTMOSV | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 30W (Tc) | N-Channel | - | 600V | 9.7A (Tc) | 380 mOhm @ 4.9A, 10V | 4V @ 360µA | 20nC @ 10V | 590pF @ 300V | 10V | ±30V | |||
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VIEW |
1,951
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CHANNEL 600V 9.7A DPAK | DTMOSV | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 30W (Tc) | N-Channel | - | 600V | 9.7A (Tc) | 380 mOhm @ 4.9A, 10V | 4V @ 360µA | 20nC @ 10V | 590pF @ 300V | 10V | ±30V | |||
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VIEW |
677
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CHANNEL 600V 9.7A DPAK | DTMOSV | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 30W (Tc) | N-Channel | - | 600V | 9.7A (Tc) | 380 mOhm @ 4.9A, 10V | 4V @ 360µA | 20nC @ 10V | 590pF @ 300V | 10V | ±30V | |||
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VIEW |
1,318
In-stock
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Toshiba Semiconductor and Storage | MOSFET N CH 600V 5.4A TO-220SIS | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 30W (Tc) | N-Channel | Super Junction | 600V | 5.4A (Ta) | 900 mOhm @ 2.7A, 10V | 3.7V @ 270µA | 10.5nC @ 10V | 380pF @ 300V | 10V | ±30V | |||
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VIEW |
2,192
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 600V 9.7A TO-220SIS | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 30W (Tc) | N-Channel | - | 600V | 9.7A (Ta) | 450 mOhm @ 4.9A, 10V | 4.5V @ 500µA | 25nC @ 10V | 720pF @ 300V | 10V | ±30V | |||
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VIEW |
3,842
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 600V 8A TO-220SIS | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 30W (Tc) | N-Channel | - | 600V | 8A (Ta) | 540 mOhm @ 4A, 10V | 4.5V @ 400µA | 22nC @ 10V | 590pF @ 300V | 10V | ±30V | |||
