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Picture	Mfr Part #	QUANTITY		Inventory	MANUFACTURE	Description	Package	Series	Part Status	Packaging	Technology	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package	Power Dissipation (Max)	FET Type	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)
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	TK16C60W,S1VQ	RFQ VIEW	PDF RFQ	1,583 In-stock	Toshiba Semiconductor and Storage	MOSFET N-CH 600V 15.8A I2PAK		DTMOSIV	Active	Tube	MOSFET (Metal Oxide)	150°C (TJ)	Through Hole	TO-262-3 Long Leads, I²Pak, TO-262AA	I2PAK	130W (Tc)	N-Channel	-	600V	15.8A (Ta)	190 mOhm @ 7.9A, 10V	3.7V @ 790µA	38nC @ 10V	1350pF @ 300V	10V	±30V
	TK20C60W,S1VQ	RFQ VIEW	PDF RFQ	807 In-stock	Toshiba Semiconductor and Storage	MOSFET N-CH 600V 20A I2PAK		DTMOSIV	Active	Tube	MOSFET (Metal Oxide)	150°C (TJ)	Through Hole	TO-262-3 Long Leads, I²Pak, TO-262AA	I2PAK	165W (Tc)	N-Channel	-	600V	20A (Ta)	155 mOhm @ 10A, 10V	3.7V @ 1mA	48nC @ 10V	1680pF @ 300V	10V	±30V
	TK14C65W5,S1Q	RFQ VIEW	PDF RFQ	3,899 In-stock	Toshiba Semiconductor and Storage	MOSFET N-CH 650V 13.7A I2PAK		DTMOSIV	Active	Tube	MOSFET (Metal Oxide)	150°C (TJ)	Through Hole	TO-262-3 Long Leads, I²Pak, TO-262AA	I2PAK	130W (Tc)	N-Channel	-	650V	13.7A (Ta)	300 mOhm @ 6.9A, 10V	4.5V @ 690µA	40nC @ 10V	1300pF @ 300V	10V	±30V
	TK14C65W,S1Q	RFQ VIEW	PDF RFQ	3,969 In-stock	Toshiba Semiconductor and Storage	MOSFET N-CH 650V 13.7A I2PAK		DTMOSIV	Active	Tube	MOSFET (Metal Oxide)	150°C (TJ)	Through Hole	TO-262-3 Long Leads, I²Pak, TO-262AA	I2PAK	130W (Tc)	N-Channel	-	650V	13.7A (Ta)	250 mOhm @ 6.9A, 10V	3.5V @ 690µA	35nC @ 10V	1300pF @ 300V	10V	±30V

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