- Series :
- Power Dissipation (Max) :
- FET Feature :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
-
- 110 mOhm @ 13.8A, 10V (1)
- 125 mOhm @ 7.5A, 10V (1)
- 140 mOhm @ 7.5A, 10V (1)
- 155 mOhm @ 10A, 10V (1)
- 175 mOhm @ 10A, 10V (1)
- 190 mOhm @ 7.9A, 10V (1)
- 200 mOhm @ 8.7A, 10V (1)
- 250 mOhm @ 6.9A, 10V (1)
- 300 mOhm @ 6.9A, 10V (1)
- 40 mOhm @ 21A, 10V (1)
- 40 mOhm @ 30.9A, 10V (1)
- 65 mOhm @ 12.5A, 10V (1)
- 65 mOhm @ 19.4A, 10V (1)
- 74 mOhm @ 19.4A, 10V (1)
- 80 mOhm @ 17.5A, 10V (1)
- 88 mOhm @ 15.4A, 10V (1)
- 88 mOhm @ 9.4A, 10V (1)
- 95 mOhm @ 17.5A, 10V (1)
- 99 mOhm @ 15.4A, 10V (1)
- Vgs(th) (Max) @ Id :
-
- 3.5V @ 1.2mA (1)
- 3.5V @ 1.5mA (1)
- 3.5V @ 1.6mA (1)
- 3.5V @ 1.9mA (1)
- 3.5V @ 2.1mA (1)
- 3.5V @ 3.1mA (1)
- 3.5V @ 690µA (1)
- 3.5V @ 900µA (1)
- 3.7V @ 1.5mA (1)
- 3.7V @ 1.9mA (1)
- 3.7V @ 1mA (1)
- 3.7V @ 3.1mA (1)
- 3.7V @ 790µA (1)
- 4.5V @ 1.2mA (1)
- 4.5V @ 1.5mA (1)
- 4.5V @ 1.9mA (1)
- 4.5V @ 1mA (1)
- 4.5V @ 2.1mA (1)
- 4.5V @ 690µA (1)
- Input Capacitance (Ciss) (Max) @ Vds :
- Applied Filters :
19 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||||||
|
VIEW |
2,319
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 650V 35A TO-247 | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-247-3 | TO-247 | 270W (Tc) | N-Channel | - | 650V | 35A (Ta) | 95 mOhm @ 17.5A, 10V | 4.5V @ 2.1mA | 115nC @ 10V | 4100pF @ 300V | 10V | ±30V | |||
|
|
VIEW |
3,188
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 20A TO-247 | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-247-3 | TO-247 | 165W (Tc) | N-Channel | - | 600V | 20A (Ta) | 155 mOhm @ 10A, 10V | 3.7V @ 1mA | 48nC @ 10V | 1680pF @ 300V | 10V | ±30V | |||
|
|
VIEW |
1,355
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N CH 600V 30.8A TO247 | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-247-3 | TO-247 | 230W (Tc) | N-Channel | Super Junction | 600V | 30.8A (Ta) | 88 mOhm @ 15.4A, 10V | 3.7V @ 1.5mA | 86nC @ 10V | 3000pF @ 300V | 10V | ±30V | |||
|
|
VIEW |
2,287
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N CH 600V 15.8A TO247 | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-247-3 | TO-247 | 130W (Tc) | N-Channel | Super Junction | 600V | 15.8A (Ta) | 190 mOhm @ 7.9A, 10V | 3.7V @ 790µA | 38nC @ 10V | 1350pF @ 300V | 10V | ±30V | |||
|
|
VIEW |
1,552
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 38.8A TO-247 | DTMOSIV-H | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-247-3 | TO-247 | 270W (Tc) | N-Channel | Super Junction | 600V | 38.8A (Ta) | 65 mOhm @ 12.5A, 10V | 3.5V @ 1.9mA | 85nC @ 10V | 4100pF @ 300V | 10V | ±30V | |||
|
|
VIEW |
1,680
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 30.8A TO-247 | DTMOSIV-H | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-247-3 | TO-247 | 230W (Tc) | N-Channel | Super Junction | 600V | 30.8A (Ta) | 88 mOhm @ 9.4A, 10V | 3.5V @ 1.5mA | 65nC @ 10V | 3000pF @ 300V | 10V | ±30V | |||
|
|
VIEW |
1,527
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 25A TO-247 | DTMOSIV-H | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-247-3 | TO-247 | 180W (Tc) | N-Channel | - | 600V | 25A (Ta) | 125 mOhm @ 7.5A, 10V | 3.5V @ 1.2mA | 40nC @ 10V | 2400pF @ 300V | 10V | ±30V | |||
|
|
VIEW |
2,618
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 20A TO-247 | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-247-3 | TO-247 | 165W (Tc) | N-Channel | - | 600V | 20A (Ta) | 175 mOhm @ 10A, 10V | 4.5V @ 1mA | 55nC @ 10V | 1800pF @ 300V | 10V | ±30V | |||
|
|
VIEW |
3,671
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 650V 13.7A TO-220 | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-247-3 | TO-247 | 130W (Tc) | N-Channel | - | 650V | 13.7A (Ta) | 250 mOhm @ 6.9A, 10V | 3.5V @ 690µA | 35nC @ 10V | 1300pF @ 300V | 10V | ±30V | |||
|
|
VIEW |
2,152
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 650V 27.6A TO247 | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-247-3 | TO-247 | 230W (Tc) | N-Channel | - | 650V | 27.6A (Ta) | 110 mOhm @ 13.8A, 10V | 3.5V @ 1.6mA | 75nC @ 10V | 3000pF @ 300V | 10V | ±30V | |||
|
|
VIEW |
2,536
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 650V 17.3A T0247 | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-247-3 | TO-247 | 165W (Tc) | N-Channel | - | 650V | 17.3A (Ta) | 200 mOhm @ 8.7A, 10V | 3.5V @ 900µA | 45nC @ 10V | 1800pF @ 300V | 10V | ±30V | |||
|
|
VIEW |
3,286
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 61.8A TO-247 | DTMOSIV-H | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-247-3 | TO-247 | 400W (Tc) | N-Channel | Super Junction | 600V | 61.8A (Ta) | 40 mOhm @ 21A, 10V | 3.5V @ 3.1mA | 135nC @ 10V | 6500pF @ 300V | 10V | ±30V | |||
|
|
VIEW |
3,656
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 30.8A TO-247 | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-247-3 | TO-247 | 230W (Tc) | N-Channel | - | 600V | 30.8A (Ta) | 99 mOhm @ 15.4A, 10V | 4.5V @ 1.5mA | 105nC @ 10V | 3000pF @ 300V | 10V | ±30V | |||
|
|
VIEW |
1,714
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 61.8A TO-247 | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-247-3 | TO-247 | 400W (Tc) | N-Channel | Super Junction | 600V | 61.8A (Ta) | 40 mOhm @ 30.9A, 10V | 3.7V @ 3.1mA | 180nC @ 10V | 6500pF @ 300V | 10V | ±30V | |||
|
|
VIEW |
2,488
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N CH 600V 38.8A TO247 | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-247-3 | TO-247 | 270W (Tc) | N-Channel | Super Junction | 600V | 38.8A (Ta) | 65 mOhm @ 19.4A, 10V | 3.7V @ 1.9mA | 110nC @ 10V | 4100pF @ 300V | 10V | ±30V | |||
|
|
VIEW |
1,582
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 650V 35A TO-247 | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-247-3 | TO-247 | 270W (Tc) | N-Channel | - | 650V | 35A (Ta) | 80 mOhm @ 17.5A, 10V | 3.5V @ 2.1mA | 100nC @ 10V | 4100pF @ 300V | 10V | ±30V | |||
|
|
VIEW |
2,939
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 25A TO247 | DTMOSIV-H | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-247-3 | TO-247 | 180W (Tc) | N-Channel | - | 600V | 25A (Ta) | 140 mOhm @ 7.5A, 10V | 4.5V @ 1.2mA | 60nC @ 10V | 2400pF @ 300V | 10V | ±30V | |||
|
|
VIEW |
2,587
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 650V 13.7A TO-247 | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-247-3 | TO-247 | 130W (Tc) | N-Channel | - | 650V | 13.7A (Ta) | 300 mOhm @ 6.9A, 10V | 4.5V @ 690µA | 40nC @ 10V | 1300pF @ 300V | 10V | ±30V | |||
|
|
VIEW |
2,245
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 38.8A T0247 | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-247-3 | TO-247 | 270W (Tc) | N-Channel | - | 600V | 38.8A (Ta) | 74 mOhm @ 19.4A, 10V | 4.5V @ 1.9mA | 135nC @ 10V | 4100pF @ 300V | 10V | ±30V | |||
