- Series :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
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11 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
2,724
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 250V 20A TO-220SIS | π-MOSVII | Obsolete | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 45W (Tc) | N-Channel | 250V | 20A (Ta) | 100 mOhm @ 10A, 10V | 3.5V @ 1mA | 55nC @ 10V | 2550pF @ 100V | 10V | ±20V | |||
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VIEW |
2,164
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 1000V 4A TO-220AB | - | Obsolete | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 100W (Tc) | N-Channel | 1000V | 4A (Ta) | 3.8 Ohm @ 2A, 10V | 3.5V @ 1mA | 60nC @ 10V | 700pF @ 25V | 10V | ±20V | |||
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VIEW |
3,748
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 30V 60A TO-3PN | - | Obsolete | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | TO-3P(N) | 150W (Tc) | N-Channel | 30V | 60A (Ta) | 12 mOhm @ 30A, 10V | 3V @ 1mA | 66nC @ 10V | 2300pF @ 10V | 10V | ±20V | |||
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VIEW |
1,841
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 450V 10A TO220FL | - | Obsolete | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3, Short Tab | TO-220FL | 65W (Tc) | N-Channel | 450V | 10A (Ta) | 650 mOhm @ 5A, 10V | 5V @ 1mA | 23nC @ 10V | 920pF @ 10V | 10V | ±30V | |||
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VIEW |
2,847
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 500V 50A TO-3P(L) | - | Obsolete | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-3PL | TO-3P(L) | 250W (Tc) | N-Channel | 500V | 50A (Ta) | 95 mOhm @ 25A, 10V | 3.4V @ 1mA | 280nC @ 10V | 11000pF @ 10V | 10V | ±30V | |||
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VIEW |
3,478
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 250V 30A TO-3PN | - | Obsolete | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | TO-3P(N)IS | 90W (Tc) | N-Channel | 250V | 30A (Ta) | 68 mOhm @ 15A, 10V | 3.5V @ 1mA | 132nC @ 10V | 5400pF @ 10V | 10V | ±20V | |||
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VIEW |
2,119
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 250V 30A TO-3PN | - | Obsolete | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | TO-3P(N) | 150W (Tc) | N-Channel | 250V | 30A (Ta) | 68 mOhm @ 15A, 10V | 3.5V @ 1mA | 132nC @ 10V | 5400pF @ 10V | 10V | ±20V | |||
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VIEW |
1,846
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 500V 18A TO-3PN | - | Obsolete | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | TO-3P(N)IS | 90W (Tc) | N-Channel | 500V | 18A (Ta) | 270 mOhm @ 10A, 10V | 4V @ 1mA | 80nC @ 10V | 3720pF @ 10V | 10V | ±30V | |||
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VIEW |
817
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 500V 14A TO-3PN | - | Obsolete | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | TO-3P(N)IS | 80W (Tc) | N-Channel | 500V | 14A (Ta) | 400 mOhm @ 7A, 10V | 4V @ 1mA | 58nC @ 10V | 2600pF @ 10V | 10V | ±30V | |||
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VIEW |
3,943
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 900V 8A TO-3PN | - | Obsolete | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | TO-3P(N)IS | 85W (Tc) | N-Channel | 900V | 8A (Ta) | 1.4 Ohm @ 4A, 10V | 4V @ 1mA | 58nC @ 10V | 2040pF @ 25V | 10V | ±30V | |||
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VIEW |
3,478
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 900V 3A TO-3PN | - | Obsolete | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | TO-3P(N) | 125W (Tc) | N-Channel | 900V | 3A (Ta) | 4.3 Ohm @ 1.5A, 10V | 4V @ 1mA | 25nC @ 10V | 750pF @ 25V | 10V | ±30V |