Supplier Device Package :
Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
Input Capacitance (Ciss) (Max) @ Vds :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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TK39J60W5,S1VQ
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Toshiba Semiconductor and Storage MOSFET N CH 600V 38.8A TO-3P(N) DTMOSIV Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-3P-3, SC-65-3 TO-3P(N) 270W (Tc) N-Channel Super Junction 600V 38.8A (Ta) 65 mOhm @ 19.4A, 10V 3.7V @ 1.9mA 135nC @ 10V 4100pF @ 300V 10V ±30V
TK62N60X,S1F
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Toshiba Semiconductor and Storage MOSFET N-CH 600V 61.8A TO-247 DTMOSIV-H Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-247-3 TO-247 400W (Tc) N-Channel Super Junction 600V 61.8A (Ta) 40 mOhm @ 21A, 10V 3.5V @ 3.1mA 135nC @ 10V 6500pF @ 300V 10V ±30V
TK39N60W5,S1VF
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2,245
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Toshiba Semiconductor and Storage MOSFET N-CH 600V 38.8A T0247 DTMOSIV Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-247-3 TO-247 270W (Tc) N-Channel - 600V 38.8A (Ta) 74 mOhm @ 19.4A, 10V 4.5V @ 1.9mA 135nC @ 10V 4100pF @ 300V 10V ±30V