- Series :
- Package / Case :
- Supplier Device Package :
- Power Dissipation (Max) :
- FET Feature :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
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4 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
3,227
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 100V 100A TO220 | U-MOSVIII-H | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 | TO-220 | 255W (Tc) | N-Channel | - | 100V | 100A (Ta) | 3.4 mOhm @ 50A, 10V | 4V @ 1mA | 140nC @ 10V | 8800pF @ 50V | 10V | ±20V | |||
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VIEW |
2,962
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 80V 100A TO220 | U-MOSVIII-H | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 | TO-220 | 255W (Tc) | N-Channel | - | 80V | 100A (Ta) | 3.2 mOhm @ 50A, 10V | 4V @ 1mA | 130nC @ 10V | 9000pF @ 40V | 10V | ±20V | |||
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VIEW |
655
In-stock
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Toshiba Semiconductor and Storage | MOSFET N CH 600V 100A TO3P(L) | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-3PL | TO-3P(L) | 797W (Tc) | N-Channel | Super Junction | 600V | 100A (Ta) | 18 mOhm @ 50A, 10V | 3.7V @ 5mA | 360nC @ 10V | 15000pF @ 30V | 10V | ±30V | |||
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VIEW |
1,498
In-stock
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Toshiba Semiconductor and Storage | MOSFET N CH 60V 100A TO-220 | U-MOSVIII-H | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 | TO-220 | 255W (Tc) | N-Channel | - | 60V | 100A (Ta) | 2.3 mOhm @ 50A, 10V | 4V @ 1mA | 140nC @ 10V | 10500pF @ 30V | 10V | ±20V |