- Packaging :
- Operating Temperature :
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- Package / Case :
- Supplier Device Package :
- Power Dissipation (Max) :
- Rds On (Max) @ Id, Vgs :
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10 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
3,257
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 600V 10A TO220SIS | π-MOSVII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 45W (Tc) | N-Channel | 600V | 10A (Ta) | 750 mOhm @ 5A, 10V | 4V @ 1mA | 25nC @ 10V | 1350pF @ 25V | 10V | ±30V | |||
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VIEW |
3,309
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 500V 10A TO-220SIS | π-MOSVII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 45W (Tc) | N-Channel | 500V | 10A (Ta) | 720 mOhm @ 5A, 10V | 4V @ 1mA | 20nC @ 10V | 1050pF @ 25V | 10V | ±30V | |||
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VIEW |
2,444
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 550V 10A TO-220SIS | π-MOSVII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 45W (Tc) | N-Channel | 550V | 10A (Ta) | 720 mOhm @ 5A, 10V | 4V @ 1mA | 24nC @ 10V | 1200pF @ 25V | 10V | ±30V | |||
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VIEW |
1,243
In-stock
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Toshiba Semiconductor and Storage | PB-F POWER MOSFET TRANSISTOR TO- | U-MOSIX | Active | Tube | MOSFET (Metal Oxide) | 150°C | Through Hole | TO-220-3 Full Pack | TO-220SIS | 40W (Tc) | N-Channel | 600V | 10A (Ta) | 750 mOhm @ 5A, 10V | 4V @ 1mA | 30nC @ 10V | 1130pF @ 300V | 10V | ±30V | |||
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VIEW |
2,566
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 800V TO-3PN | π-MOSVIII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | TO-3P(N) | 250W (Tc) | N-Channel | 800V | 10A (Ta) | 1 Ohm @ 5A, 10V | 4V @ 1mA | 46nC @ 10V | 2000pF @ 25V | 10V | ±30V | |||
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VIEW |
3,049
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 250V 15A 8-SOP | U-MOSVIII-H | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-SOP Advance (5x5) | 1.6W (Ta), 57W (Tc) | N-Channel | 250V | 10A (Ta) | 112 mOhm @ 5A, 10V | 4V @ 300µA | 11nC @ 10V | 1100pF @ 100V | 10V | ±20V | |||
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VIEW |
2,455
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 250V 15A 8-SOP | U-MOSVIII-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-SOP Advance (5x5) | 1.6W (Ta), 57W (Tc) | N-Channel | 250V | 10A (Ta) | 112 mOhm @ 5A, 10V | 4V @ 300µA | 11nC @ 10V | 1100pF @ 100V | 10V | ±20V | |||
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VIEW |
845
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 250V 15A 8-SOP | U-MOSVIII-H | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-SOP Advance (5x5) | 1.6W (Ta), 57W (Tc) | N-Channel | 250V | 10A (Ta) | 112 mOhm @ 5A, 10V | 4V @ 300µA | 11nC @ 10V | 1100pF @ 100V | 10V | ±20V | |||
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VIEW |
1,256
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 800V TO220SIS | π-MOSVIII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 50W (Tc) | N-Channel | 800V | 10A (Ta) | 1 Ohm @ 5A, 10V | 4V @ 1mA | 46nC @ 10V | 2000pF @ 25V | 10V | ±30V | |||
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VIEW |
1,845
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 600V TO220SIS | - | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 45W (Tc) | N-Channel | 600V | 10A (Ta) | 750 mOhm @ 5A, 10V | 4V @ 1mA | 40nC @ 10V | 1300pF @ 25V | 10V | ±30V |