- Operating Temperature :
- Mounting Type :
- Supplier Device Package :
- Power Dissipation (Max) :
-
- 100W (Tc) (6)
- 104W (Tc) (1)
- 110W (Tc) (1)
- 130W (Tc) (6)
- 139W (Tc) (1)
- 144W (Tc) (1)
- 156W (Tc) (4)
- 165W (Tc) (5)
- 170W (Tc) (1)
- 180W (Tc) (5)
- 190W (Tc) (1)
- 230W (Tc) (7)
- 240W (Tc) (7)
- 270W (Tc) (5)
- 30W (2)
- 30W (Tc) (15)
- 35W (Tc) (7)
- 400W (Tc) (3)
- 40W (Tc) (6)
- 45W (Tc) (13)
- 50W (Tc) (3)
- 60W (Tc) (16)
- 797W (Tc) (1)
- 80W (Tc) (11)
- 88.3W (Tc) (1)
- FET Feature :
- Current - Continuous Drain (Id) @ 25°C :
-
- 100A (Ta) (1)
- 10A (Ta) (3)
- 11.5A (Ta) (5)
- 11.5A (Tc) (4)
- 11A (Ta) (2)
- 12A (Ta) (3)
- 13A (Ta) (1)
- 15.8A (Ta) (10)
- 15A (Ta) (3)
- 2.5A (Ta) (2)
- 20A (Ta) (13)
- 25A (Ta) (7)
- 2A (Ta) (2)
- 3.5A (Ta) (2)
- 3.7A (Ta) (3)
- 30.8A (Ta) (15)
- 38.8A (Ta) (6)
- 4A (Ta) (1)
- 5.4A (Ta) (5)
- 5A (Ta) (1)
- 6.2A (Ta) (3)
- 61.8A (Ta) (3)
- 6A (Ta) (2)
- 7.5A (Ta) (1)
- 7A (Ta) (7)
- 7A (Tc) (4)
- 8A (Ta) (7)
- 9.7A (Ta) (9)
- 9.7A (Tc) (4)
- 9A (Ta) (1)
- Rds On (Max) @ Id, Vgs :
-
- 1 Ohm @ 4A, 10V (1)
- 1.2 Ohm @ 3A, 10V (1)
- 1.25 Ohm @ 3A, 10V (1)
- 1.43 Ohm @ 2.5A, 10V (1)
- 1.7 Ohm @ 2A, 10V (1)
- 1.9 Ohm @ 1.9A, 10V (1)
- 109 mOhm @ 15.4A, 10V (3)
- 125 mOhm @ 7.5A, 10V (3)
- 135 mOhm @ 7.5A, 10V (1)
- 140 mOhm @ 7.5A, 10V (3)
- 155 mOhm @ 10A, 10V (5)
- 170 mOhm @ 10A, 10V (1)
- 175 mOhm @ 10A, 10V (2)
- 18 mOhm @ 50A, 10V (1)
- 190 mOhm @ 10A, 10V (5)
- 190 mOhm @ 7.9A, 10V (9)
- 2 Ohm @ 1.9A, 10V (2)
- 2.2 Ohm @ 1.8A, 10V (2)
- 2.8 Ohm @ 1.3A, 10V (2)
- 230 mOhm @ 7.9A, 10V (1)
- 290 mOhm @ 5.8A, 10V (4)
- 300 mOhm @ 5.8A, 10V (3)
- 300 mOhm @ 7.5A, 10V (2)
- 340 mOhm @ 5.8A, 10V (2)
- 370 mOhm @ 7.5A, 10V (1)
- 38 mOhm @ 30.9A, 10V (1)
- 380 mOhm @ 4.9A, 10V (8)
- 4.3 Ohm @ 1A, 10V (2)
- 40 mOhm @ 21A, 10V (1)
- 40 mOhm @ 30.9A, 10V (1)
- 400 mOhm @ 6A, 10V (2)
- 430 mOhm @ 4.9A, 10V (4)
- 430 mOhm @ 6.5A, 10V (1)
- 450 mOhm @ 4.9A, 10V (1)
- 500 mOhm @ 4A, 10V (3)
- 540 mOhm @ 4A, 10V (1)
- 550 mOhm @ 6A, 10V (1)
- 560 mOhm @ 3.5A, 10V (4)
- 560 mOhm @ 4A, 10V (3)
- 600 mOhm @ 3.5A, 10V (3)
- 65 mOhm @ 12.5A, 10V (1)
- 65 mOhm @ 19.4A, 10V (4)
- 650 mOhm @ 3.5A, 10V (1)
- 650 mOhm @ 5.5A, 10V (2)
- 670 mOhm @ 3.5A, 10V (3)
- 74 mOhm @ 19.4A, 10V (1)
- 750 mOhm @ 3.1A, 10V (1)
- 750 mOhm @ 5A, 10V (3)
- 820 mOhm @ 3.1A, 10V (2)
- 830 mOhm @ 4.5A, 10V (1)
- 88 mOhm @ 15.4A, 10V (5)
- 88 mOhm @ 9.4A, 10V (2)
- 900 mOhm @ 2.7A, 10V (5)
- 98 mOhm @ 15.4A, 10V (1)
- 98 mOhm @ 9.4A, 10V (3)
- 99 mOhm @ 15.4A, 10V (1)
- Vgs(th) (Max) @ Id :
-
- 3.5V @ 1.2mA (4)
- 3.5V @ 1.5mA (5)
- 3.5V @ 1.9mA (1)
- 3.5V @ 3.1mA (1)
- 3.7V @ 1.5mA (7)
- 3.7V @ 1.9mA (4)
- 3.7V @ 1mA (6)
- 3.7V @ 270µA (5)
- 3.7V @ 3.1mA (2)
- 3.7V @ 310µA (3)
- 3.7V @ 350µA (3)
- 3.7V @ 400µA (3)
- 3.7V @ 500µA (8)
- 3.7V @ 5mA (1)
- 3.7V @ 600µA (5)
- 3.7V @ 790µA (8)
- 4.4V @ 1mA (10)
- 4.5V @ 1.2mA (3)
- 4.5V @ 1.5mA (4)
- 4.5V @ 1.9mA (1)
- 4.5V @ 1mA (5)
- 4.5V @ 350µA (4)
- 4.5V @ 400µA (4)
- 4.5V @ 500µA (1)
- 4.5V @ 790µA (1)
- 4V @ 1.16mA (1)
- 4V @ 1mA (10)
- 4V @ 240µA (4)
- 4V @ 360µA (4)
- 4V @ 400µA (1)
- 4V @ 450µA (4)
- 4V @ 630µA (1)
- 5V @ 1mA (6)
- Gate Charge (Qg) (Max) @ Vgs :
-
- 10.5nC @ 10V (5)
- 105nC @ 10V (5)
- 110nC @ 10V (3)
- 11nC @ 10V (4)
- 12nC @ 10V (4)
- 135nC @ 10V (3)
- 14.5nC @ 10V (4)
- 14nC @ 10V (3)
- 15nC @ 10V (3)
- 16nC @ 10V (6)
- 17nC @ 10V (2)
- 18.5nC @ 10V (3)
- 180nC @ 10V (2)
- 20nC @ 10V (13)
- 21nC @ 10V (1)
- 22nC @ 10V (4)
- 24nC @ 10V (1)
- 25nC @ 10V (11)
- 27nC @ 10V (2)
- 28nC @ 10V (1)
- 30nC @ 10V (1)
- 34nC @ 10V (1)
- 360nC @ 10V (1)
- 38nC @ 10V (8)
- 40nC @ 10V (7)
- 43nC @ 10V (2)
- 45nC @ 10V (1)
- 48nC @ 10V (6)
- 55nC @ 10V (5)
- 60nC @ 10V (3)
- 65nC @ 10V (5)
- 7nC @ 10V (2)
- 85nC @ 10V (1)
- 86nC @ 10V (5)
- 9nC @ 10V (2)
- Input Capacitance (Ciss) (Max) @ Vds :
-
- 1050pF @ 25V (1)
- 1130pF @ 300V (1)
- 1200pF @ 25V (1)
- 1300pF @ 25V (1)
- 1320pF @ 300V (1)
- 1350pF @ 25V (1)
- 1350pF @ 300V (10)
- 1470pF @ 10V (2)
- 15000pF @ 30V (1)
- 1550pF @ 25V (1)
- 1680pF @ 300V (6)
- 1800pF @ 25V (1)
- 1800pF @ 300V (5)
- 2300pF @ 25V (1)
- 2400pF @ 300V (7)
- 2600pF @ 25V (1)
- 280pF @ 25V (2)
- 3000pF @ 300V (15)
- 380pF @ 25V (2)
- 380pF @ 300V (9)
- 390pF @ 300V (3)
- 4100pF @ 300V (6)
- 490pF @ 25V (2)
- 490pF @ 300V (8)
- 540pF @ 25V (2)
- 570pF @ 300V (3)
- 590pF @ 300V (8)
- 600pF @ 25V (1)
- 6500pF @ 300V (3)
- 700pF @ 25V (1)
- 700pF @ 300V (7)
- 720pF @ 10V (2)
- 720pF @ 300V (2)
- 730pF @ 300V (4)
- 740pF @ 300V (1)
- 800pF @ 25V (1)
- 890pF @ 300V (5)
- 950pF @ 10V (2)
- Applied Filters :
130 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||||||
|
VIEW |
2,150
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 3.7A DPAK-3 | π-MOSVII | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 80W (Tc) | N-Channel | - | 600V | 3.7A (Ta) | 2 Ohm @ 1.9A, 10V | 4.4V @ 1mA | 11nC @ 10V | 540pF @ 25V | 10V | ±30V | |||
|
|
VIEW |
2,319
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 3.5A DPAK-3 | π-MOSVII | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 80W (Tc) | N-Channel | - | 600V | 3.5A (Ta) | 2.2 Ohm @ 1.8A, 10V | 4.4V @ 1mA | 11nC @ 10V | 490pF @ 25V | 10V | ±30V | |||
|
VIEW |
2,924
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 3.7A TO-220SIS | π-MOSVII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 35W (Tc) | N-Channel | - | 600V | 3.7A (Ta) | 2 Ohm @ 1.9A, 10V | 4.4V @ 1mA | 11nC @ 10V | 540pF @ 25V | 10V | ±30V | |||
|
|
VIEW |
1,058
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 15A TO-220SIS | DTMOSII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 40W (Tc) | N-Channel | - | 600V | 15A (Ta) | 300 mOhm @ 7.5A, 10V | 5V @ 1mA | 17nC @ 10V | 950pF @ 10V | 10V | ±30V | |||
|
VIEW |
3,979
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N CH 600V 15.8A 5DFN | DTMOSIV | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 4-VSFN Exposed Pad | 4-DFN-EP (8x8) | 139W (Tc) | N-Channel | Super Junction | 600V | 15.8A (Ta) | 190 mOhm @ 7.9A, 10V | 3.7V @ 790µA | 38nC @ 10V | 1350pF @ 300V | 10V | ±30V | |||
|
|
VIEW |
980
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N CH 600V 11.5A 5DFN | DTMOSIV | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 4-VSFN Exposed Pad | 4-DFN-EP (8x8) | 104W (Tc) | N-Channel | Super Junction | 600V | 11.5A (Ta) | 300 mOhm @ 5.8A, 10V | 3.7V @ 600µA | 25nC @ 10V | 890pF @ 300V | 10V | ±30V | |||
|
VIEW |
3,156
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N CH 600V 11.5A IPAK | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-251-3 Stub Leads, IPak | I-PAK | 100W (Tc) | N-Channel | Super Junction | 600V | 11.5A (Ta) | 340 mOhm @ 5.8A, 10V | 3.7V @ 600µA | 25nC @ 10V | 890pF @ 300V | 10V | ±30V | |||
|
VIEW |
3,199
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N CH 600V 11.5A DPAK | DTMOSIV | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 100W (Tc) | N-Channel | Super Junction | 600V | 11.5A (Ta) | 340 mOhm @ 5.8A, 10V | 3.7V @ 600µA | 25nC @ 10V | 890pF @ 300V | 10V | ±30V | |||
|
VIEW |
3,860
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N CH 600V 15.8A TO-220SIS | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 40W (Tc) | N-Channel | Super Junction | 600V | 15.8A (Ta) | 190 mOhm @ 7.9A, 10V | 3.7V @ 1.5mA | 43nC @ 10V | 1350pF @ 300V | 10V | ±30V | |||
|
|
VIEW |
1,887
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 3.5A TO220SIS | π-MOSVII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | - | N-Channel | - | 600V | 3.5A (Ta) | 2.2 Ohm @ 1.8A, 10V | 4.4V @ 1mA | 11nC @ 10V | 490pF @ 25V | 10V | ±30V | |||
|
VIEW |
3,748
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 30.8A TO-3P(N) | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | TO-3P(N) | 230W (Tc) | N-Channel | Super Junction | 600V | 30.8A (Ta) | 88 mOhm @ 15.4A, 10V | 3.7V @ 1.5mA | 105nC @ 10V | 3000pF @ 300V | 10V | ±30V | |||
|
|
VIEW |
2,013
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 30.8A TO-220SIS | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 45W (Tc) | N-Channel | Super Junction | 600V | 30.8A (Ta) | 88 mOhm @ 15.4A, 10V | 3.7V @ 1.5mA | 86nC @ 10V | 3000pF @ 300V | 10V | ±30V | |||
|
VIEW |
2,908
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N CH 600V 30.8A TO-220 | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 | TO-220 | 230W (Tc) | N-Channel | Super Junction | 600V | 30.8A (Ta) | 88 mOhm @ 15.4A, 10V | 3.7V @ 1.5mA | 86nC @ 10V | 3000pF @ 300V | 10V | ±30V | |||
|
VIEW |
3,188
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 20A TO-247 | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-247-3 | TO-247 | 165W (Tc) | N-Channel | - | 600V | 20A (Ta) | 155 mOhm @ 10A, 10V | 3.7V @ 1mA | 48nC @ 10V | 1680pF @ 300V | 10V | ±30V | |||
|
VIEW |
1,583
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 15.8A I2PAK | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK | 130W (Tc) | N-Channel | - | 600V | 15.8A (Ta) | 190 mOhm @ 7.9A, 10V | 3.7V @ 790µA | 38nC @ 10V | 1350pF @ 300V | 10V | ±30V | |||
|
|
VIEW |
920
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N CH 600V 8A IPAK | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-251-3 Stub Leads, IPak | I-PAK | 80W (Tc) | N-Channel | Super Junction | 600V | 8A (Ta) | 500 mOhm @ 4A, 10V | 3.7V @ 400µA | 18.5nC @ 10V | 570pF @ 300V | 10V | ±30V | |||
|
|
VIEW |
2,384
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N CH 600V 6.2A TO-220SIS | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 30W (Tc) | N-Channel | Super Junction | 600V | 6.2A (Ta) | 750 mOhm @ 3.1A, 10V | 3.7V @ 310µA | 12nC @ 10V | 390pF @ 300V | 10V | ±30V | |||
|
|
VIEW |
670
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 9A TO-220SIS | π-MOSVII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 45W (Tc) | N-Channel | - | 600V | 9A (Ta) | 830 mOhm @ 4.5A, 10V | 4V @ 1mA | 24nC @ 10V | 1200pF @ 25V | 10V | ±30V | |||
|
|
VIEW |
2,608
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N CH 600V 8A DPAK | DTMOSIV | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 80W (Tc) | N-Channel | Super Junction | 600V | 8A (Ta) | 500 mOhm @ 4A, 10V | 3.7V @ 400µA | 18.5nC @ 10V | 570pF @ 300V | 10V | ±30V | |||
|
|
VIEW |
621
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 2.5A TO-220SIS | π-MOSVII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 30W (Tc) | N-Channel | - | 600V | 2.5A (Ta) | 2.8 Ohm @ 1.3A, 10V | 4.4V @ 1mA | 9nC @ 10V | 380pF @ 25V | 10V | ±30V | |||
|
|
VIEW |
3,257
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 10A TO220SIS | π-MOSVII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 45W (Tc) | N-Channel | - | 600V | 10A (Ta) | 750 mOhm @ 5A, 10V | 4V @ 1mA | 25nC @ 10V | 1350pF @ 25V | 10V | ±30V | |||
|
|
VIEW |
911
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 15.8A TO-220AB | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 | TO-220 | 130W (Tc) | N-Channel | - | 600V | 15.8A (Ta) | 230 mOhm @ 7.9A, 10V | 4.5V @ 790µA | 43nC @ 10V | 1350pF @ 300V | 10V | ±30V | |||
|
|
VIEW |
2,539
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N CH 600V 30.8A 5DFN | DTMOSIV | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 4-VSFN Exposed Pad | 4-DFN-EP (8x8) | 240W (Tc) | N-Channel | Super Junction | 600V | 30.8A (Ta) | 98 mOhm @ 15.4A, 10V | 3.7V @ 1.5mA | 86nC @ 10V | 3000pF @ 300V | 10V | ±30V | |||
|
|
VIEW |
1,796
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 20A TO-220 | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 | TO-220 | 165W (Tc) | N-Channel | - | 600V | 20A (Ta) | 155 mOhm @ 10A, 10V | 3.7V @ 1mA | 48nC @ 10V | 1680pF @ 300V | 10V | ±30V | |||
|
|
VIEW |
927
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 12A TO220SIS | DTMOSII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 35W (Tc) | N-Channel | - | 600V | 12A (Ta) | 400 mOhm @ 6A, 10V | 5V @ 1mA | 14nC @ 10V | 720pF @ 10V | 10V | ±30V | |||
|
VIEW |
2,105
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N CH 600V 11.5A TO-220SIS | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 35W (Tc) | N-Channel | Super Junction | 600V | 11.5A (Ta) | 300 mOhm @ 5.8A, 10V | 3.7V @ 600µA | 25nC @ 10V | 890pF @ 300V | 10V | ±30V | |||
|
|
VIEW |
756
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 7A IPAK-3 | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-251-3 Stub Leads, IPak | I-PAK | 60W (Tc) | N-Channel | - | 600V | 7A (Ta) | 600 mOhm @ 3.5A, 10V | 3.7V @ 350µA | 15nC @ 10V | 490pF @ 300V | 10V | ±30V | |||
|
|
VIEW |
808
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N CH 600V 9.7A TO-220 | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | - | Through Hole | TO-220-3 Full Pack | TO-220 | 30W (Tc) | N-Channel | - | 600V | 9.7A (Ta) | 380 mOhm @ 4.9A, 10V | 3.7V @ 500µA | 20nC @ 10V | 720pF @ 300V | 10V | ±30V | |||
|
|
VIEW |
774
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N CH 600V 7A TO-220SIS | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 30W (Tc) | N-Channel | Super Junction | 600V | 7A (Ta) | 600 mOhm @ 3.5A, 10V | 3.7V @ 350µA | 15nC @ 10V | 490pF @ 300V | 10V | ±30V | |||
|
|
VIEW |
3,805
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 600V 9.7A 5DFN | DTMOSIV | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 4-VSFN Exposed Pad | 4-DFN-EP (8x8) | 88.3W (Tc) | N-Channel | Super Junction | 600V | 9.7A (Ta) | 380 mOhm @ 4.9A, 10V | 3.7V @ 500µA | 20nC @ 10V | 700pF @ 300V | 10V | ±30V | |||
