- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Applied Filters :
3 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW |
1,644
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 600V 10A TO-220AB | - | Obsolete | Bulk | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 125W (Tc) | N-Channel | 600V | 10A (Ta) | 750 mOhm @ 5A, 10V | 4V @ 1mA | 45nC @ 10V | 2040pF @ 10V | 10V | ±30V | |||
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VIEW |
1,016
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 600V 6A TO-220AB | - | Obsolete | Bulk | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 80W (Tc) | N-Channel | 600V | 6A (Ta) | 1.25 Ohm @ 3A, 10V | 4V @ 1mA | 30nC @ 10V | 1300pF @ 10V | 10V | ±30V | |||
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VIEW |
2,164
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 1000V 4A TO-220AB | - | Obsolete | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 100W (Tc) | N-Channel | 1000V | 4A (Ta) | 3.8 Ohm @ 2A, 10V | 3.5V @ 1mA | 60nC @ 10V | 700pF @ 25V | 10V | ±20V | |||
