Packaging :
Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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Toshiba Semiconductor and Storage MOSFET N-CH 450V 13A TO220FL - Obsolete Bulk MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3, Short Tab TO-220FL 100W (Tc) N-Channel 450V 13A (Ta) 400 mOhm @ 6A, 10V 5V @ 1mA 34nC @ 10V 1600pF @ 25V 10V ±30V
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Toshiba Semiconductor and Storage MOSFET N-CH 450V 10A TO220FL - Obsolete Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3, Short Tab TO-220FL 65W (Tc) N-Channel 450V 10A (Ta) 650 mOhm @ 5A, 10V 5V @ 1mA 23nC @ 10V 920pF @ 10V 10V ±30V