Packaging :
Drain to Source Voltage (Vdss) :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
2SK3906(Q)
RFQ
VIEW
RFQ
1,873
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 600V 20A TO-3PN - Obsolete Bulk MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-3P-3, SC-65-3 TO-3P(N) 150W (Tc) N-Channel - 600V 20A (Ta) 330 mOhm @ 10A, 10V 4V @ 1mA 60nC @ 10V 4250pF @ 25V 10V ±30V
2SK2744(F)
RFQ
VIEW
RFQ
2,939
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 50V 45A TO-3PN - Obsolete Bulk MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-3P-3, SC-65-3 TO-3P(N) 125W (Tc) N-Channel - 50V 45A (Ta) 20 mOhm @ 25A, 10V 3.5V @ 1mA 68nC @ 10V 2300pF @ 10V 10V ±20V
2SK3128(Q)
RFQ
VIEW
RFQ
3,748
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 30V 60A TO-3PN - Obsolete Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-3P-3, SC-65-3 TO-3P(N) 150W (Tc) N-Channel - 30V 60A (Ta) 12 mOhm @ 30A, 10V 3V @ 1mA 66nC @ 10V 2300pF @ 10V 10V ±20V
TK31J60W5,S1VQ
RFQ
VIEW
RFQ
3,748
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 600V 30.8A TO-3P(N) DTMOSIV Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-3P-3, SC-65-3 TO-3P(N) 230W (Tc) N-Channel Super Junction 600V 30.8A (Ta) 88 mOhm @ 15.4A, 10V 3.7V @ 1.5mA 105nC @ 10V 3000pF @ 300V 10V ±30V
2SK2967(F)
RFQ
VIEW
RFQ
2,119
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 250V 30A TO-3PN - Obsolete Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-3P-3, SC-65-3 TO-3P(N) 150W (Tc) N-Channel - 250V 30A (Ta) 68 mOhm @ 15A, 10V 3.5V @ 1mA 132nC @ 10V 5400pF @ 10V 10V ±20V
2SK2719(F)
RFQ
VIEW
RFQ
3,478
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 900V 3A TO-3PN - Obsolete Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-3P-3, SC-65-3 TO-3P(N) 125W (Tc) N-Channel - 900V 3A (Ta) 4.3 Ohm @ 1.5A, 10V 4V @ 1mA 25nC @ 10V 750pF @ 25V 10V ±30V
TK39J60W,S1VQ
RFQ
VIEW
RFQ
3,185
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 600V 38.8A TO-3P DTMOSIV Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-3P-3, SC-65-3 TO-3P(N) 270W (Tc) N-Channel Super Junction 600V 38.8A (Ta) 65 mOhm @ 19.4A, 10V 3.7V @ 1.9mA 110nC @ 10V 4100pF @ 300V 10V ±30V
TK16J60W,S1VQ
RFQ
VIEW
RFQ
2,355
In-stock
Toshiba Semiconductor and Storage MOSFET N CH 600V 15.8A TO-3P(N) DTMOSIV Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-3P-3, SC-65-3 TO-3P(N) 130W (Tc) N-Channel Super Junction 600V 15.8A (Ta) 190 mOhm @ 7.9A, 10V 3.7V @ 790µA 38nC @ 10V 1350pF @ 300V 10V ±30V
TK15J60U(F)
RFQ
VIEW
RFQ
1,741
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 600V 15A TO-3PN DTMOSII Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-3P-3, SC-65-3 TO-3P(N) 170W (Tc) N-Channel - 600V 15A (Ta) 300 mOhm @ 7.5A, 10V 5V @ 1mA 17nC @ 10V 950pF @ 10V 10V ±30V
TK10J80E,S1E
RFQ
VIEW
RFQ
2,566
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 800V TO-3PN π-MOSVIII Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-3P-3, SC-65-3 TO-3P(N) 250W (Tc) N-Channel - 800V 10A (Ta) 1 Ohm @ 5A, 10V 4V @ 1mA 46nC @ 10V 2000pF @ 25V 10V ±30V
TK31J60W,S1VQ
RFQ
VIEW
RFQ
1,104
In-stock
Toshiba Semiconductor and Storage MOSFET N CH 600V 30.8A TO-3P(N) DTMOSIV Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-3P-3, SC-65-3 TO-3P(N) 230W (Tc) N-Channel Super Junction 600V 30.8A (Ta) 88 mOhm @ 15.4A, 10V 3.7V @ 1.5mA 86nC @ 10V 3000pF @ 300V 10V ±30V
TK20J60U(F)
RFQ
VIEW
RFQ
1,720
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 600V 20A TO-3PN DTMOSII Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-3P-3, SC-65-3 TO-3P(N) 190W (Tc) N-Channel - 600V 20A (Ta) 190 mOhm @ 10A, 10V 5V @ 1mA 27nC @ 10V 1470pF @ 10V 10V ±30V
TK12J60U(F)
RFQ
VIEW
RFQ
2,692
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 600V 12A TO-3PN DTMOSII Active Bulk MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-3P-3, SC-65-3 TO-3P(N) 144W (Tc) N-Channel - 600V 12A (Ta) 400 mOhm @ 6A, 10V 5V @ 1mA 14nC @ 10V 720pF @ 10V 10V ±30V
TK62J60W,S1VQ
RFQ
VIEW
RFQ
3,824
In-stock
Toshiba Semiconductor and Storage MOSFET N CH 600V 61.8A TO-3P(N) DTMOSIV Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-3P-3, SC-65-3 TO-3P(N) 400W (Tc) N-Channel Super Junction 600V 61.8A (Ta) 38 mOhm @ 30.9A, 10V 3.7V @ 3.1mA 180nC @ 10V 6500pF @ 300V 10V ±30V
TK39J60W5,S1VQ
RFQ
VIEW
RFQ
3,498
In-stock
Toshiba Semiconductor and Storage MOSFET N CH 600V 38.8A TO-3P(N) DTMOSIV Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-3P-3, SC-65-3 TO-3P(N) 270W (Tc) N-Channel Super Junction 600V 38.8A (Ta) 65 mOhm @ 19.4A, 10V 3.7V @ 1.9mA 135nC @ 10V 4100pF @ 300V 10V ±30V
TK7J90E,S1E
RFQ
VIEW
RFQ
961
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 900V TO-3PN π-MOSVIII Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-3P-3, SC-65-3 TO-3P(N) 200W (Tc) N-Channel - 900V 7A (Ta) 2 Ohm @ 3.5A, 10V 4V @ 700µA 32nC @ 10V 1350pF @ 25V 10V ±30V
TK9J90E,S1E
RFQ
VIEW
RFQ
3,303
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 900V TO-3PN - Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-3P-3, SC-65-3 TO-3P(N) 250W (Tc) N-Channel - 900V 9A (Ta) 1.3 Ohm @ 4.5A, 10V 4V @ 900µA 46nC @ 10V 2000pF @ 25V 10V ±30V