Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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TPC8051-H(TE12L,Q)
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3,444
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Toshiba Semiconductor and Storage MOSFET N-CH 80V 13A 8-SOP U-MOSVI-H Discontinued at Digi-Key Digi-Reel® MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-SOIC (0.173", 4.40mm Width) 8-SOP (5.5x6.0) 1W (Ta) N-Channel - 80V 13A (Ta) 9.7 mOhm @ 6.5A, 10V 2.3V @ 1mA 85nC @ 10V 7540pF @ 10V 4.5V, 10V ±20V
TPC8051-H(TE12L,Q)
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RFQ
1,152
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Toshiba Semiconductor and Storage MOSFET N-CH 80V 13A 8-SOP U-MOSVI-H Discontinued at Digi-Key Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-SOIC (0.173", 4.40mm Width) 8-SOP (5.5x6.0) 1W (Ta) N-Channel - 80V 13A (Ta) 9.7 mOhm @ 6.5A, 10V 2.3V @ 1mA 85nC @ 10V 7540pF @ 10V 4.5V, 10V ±20V
TK80S06K3L(T6L1,NQ
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RFQ
1,319
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 60V 80A DPAK-3 U-MOSIV Active Tape & Reel (TR) MOSFET (Metal Oxide) 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 DPAK+ 100W (Tc) N-Channel - 60V 80A (Ta) 5.5 mOhm @ 40A, 10V 3V @ 1mA 85nC @ 10V 4200pF @ 10V 6V, 10V ±20V
TK39N60X,S1F
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RFQ
1,552
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Toshiba Semiconductor and Storage MOSFET N-CH 600V 38.8A TO-247 DTMOSIV-H Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-247-3 TO-247 270W (Tc) N-Channel Super Junction 600V 38.8A (Ta) 65 mOhm @ 12.5A, 10V 3.5V @ 1.9mA 85nC @ 10V 4100pF @ 300V 10V ±30V