- Series :
- Part Status :
- Operating Temperature :
- Mounting Type :
- Package / Case :
- Supplier Device Package :
- Power Dissipation (Max) :
- FET Type :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
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- Input Capacitance (Ciss) (Max) @ Vds :
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9 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
3,435
In-stock
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Toshiba Semiconductor and Storage | MOSFET P-CH 60V 14A TO220NIS | - | Obsolete | Bulk | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220NIS | 40W (Tc) | P-Channel | 60V | 14A (Ta) | 120 mOhm @ 7A, 10V | 2V @ 1mA | 45nC @ 10V | 1200pF @ 10V | 4V, 10V | ±20V | |||
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VIEW |
817
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 500V 14A TO-3PN | - | Obsolete | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | TO-3P(N)IS | 80W (Tc) | N-Channel | 500V | 14A (Ta) | 400 mOhm @ 7A, 10V | 4V @ 1mA | 58nC @ 10V | 2600pF @ 10V | 10V | ±30V | |||
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VIEW |
2,469
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 550V 14A TO-220SIS | π-MOSVII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 50W (Tc) | N-Channel | 550V | 14A (Ta) | 370 mOhm @ 7A, 10V | 4V @ 1mA | 40nC @ 10V | 2300pF @ 25V | 10V | ±30V | |||
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VIEW |
1,212
In-stock
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Toshiba Semiconductor and Storage | MOSFET N CH 60V 14A 8-SOP ADV | U-MOSVIII-H | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-SOP Advance (5x5) | 1.6W (Ta), 32W (Tc) | N-Channel | 60V | 14A (Ta) | 14 mOhm @ 7A, 10V | 4V @ 200µA | 16nC @ 10V | 1300pF @ 30V | 6.5V, 10V | ±20V | |||
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VIEW |
3,158
In-stock
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Toshiba Semiconductor and Storage | MOSFET N CH 60V 14A 8-SOP ADV | U-MOSVIII-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-SOP Advance (5x5) | 1.6W (Ta), 32W (Tc) | N-Channel | 60V | 14A (Ta) | 14 mOhm @ 7A, 10V | 4V @ 200µA | 16nC @ 10V | 1300pF @ 30V | 6.5V, 10V | ±20V | |||
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VIEW |
2,393
In-stock
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Toshiba Semiconductor and Storage | MOSFET N CH 60V 14A 8-SOP ADV | U-MOSVIII-H | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-SOP Advance (5x5) | 1.6W (Ta), 32W (Tc) | N-Channel | 60V | 14A (Ta) | 14 mOhm @ 7A, 10V | 4V @ 200µA | 16nC @ 10V | 1300pF @ 30V | 6.5V, 10V | ±20V | |||
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VIEW |
2,855
In-stock
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Toshiba Semiconductor and Storage | MOSFET P-CH 12V 14A UDFN6B | U-MOSVII | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | 6-UDFNB (2x2) | 1.25W (Ta) | P-Channel | 12V | 14A (Ta) | 9.1 mOhm @ 4A, 8V | 1V @ 1mA | 47nC @ 4.5V | 3350pF @ 6V | 1.8V, 8V | ±10V | |||
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VIEW |
3,821
In-stock
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Toshiba Semiconductor and Storage | MOSFET P-CH 12V 14A UDFN6B | U-MOSVII | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | 6-UDFNB (2x2) | 1.25W (Ta) | P-Channel | 12V | 14A (Ta) | 9.1 mOhm @ 4A, 8V | 1V @ 1mA | 47nC @ 4.5V | 3350pF @ 6V | 1.8V, 8V | ±10V | |||
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VIEW |
2,950
In-stock
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Toshiba Semiconductor and Storage | MOSFET P-CH 12V 14A UDFN6B | U-MOSVII | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | 6-UDFNB (2x2) | - | P-Channel | 12V | 14A (Ta) | 9.1 mOhm @ 4A, 8V | 1V @ 1mA | 47nC @ 4.5V | 3350pF @ 6V | - | - |