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Picture	Mfr Part #	QUANTITY		Inventory	MANUFACTURE	Description	Package	Series	Part Status	Packaging	Technology	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package	Power Dissipation (Max)	FET Type	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)
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	2SJ304(F)	RFQ VIEW	PDF RFQ	3,435 In-stock	Toshiba Semiconductor and Storage	MOSFET P-CH 60V 14A TO220NIS		-	Obsolete	Bulk	MOSFET (Metal Oxide)	150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220NIS	40W (Tc)	P-Channel	60V	14A (Ta)	120 mOhm @ 7A, 10V	2V @ 1mA	45nC @ 10V	1200pF @ 10V	4V, 10V	±20V
	2SK2916(F)	RFQ VIEW	PDF RFQ	817 In-stock	Toshiba Semiconductor and Storage	MOSFET N-CH 500V 14A TO-3PN		-	Obsolete	Tube	MOSFET (Metal Oxide)	150°C (TJ)	Through Hole	TO-3P-3, SC-65-3	TO-3P(N)IS	80W (Tc)	N-Channel	500V	14A (Ta)	400 mOhm @ 7A, 10V	4V @ 1mA	58nC @ 10V	2600pF @ 10V	10V	±30V
	TK14A55D(STA4,Q,M)	RFQ VIEW	PDF RFQ	2,469 In-stock	Toshiba Semiconductor and Storage	MOSFET N-CH 550V 14A TO-220SIS		π-MOSVII	Active	Tube	MOSFET (Metal Oxide)	150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220SIS	50W (Tc)	N-Channel	550V	14A (Ta)	370 mOhm @ 7A, 10V	4V @ 1mA	40nC @ 10V	2300pF @ 25V	10V	±30V
	TPH14006NH,L1Q	RFQ VIEW	PDF RFQ	1,212 In-stock	Toshiba Semiconductor and Storage	MOSFET N CH 60V 14A 8-SOP ADV		U-MOSVIII-H	Active	Digi-Reel®	MOSFET (Metal Oxide)	150°C (TJ)	Surface Mount	8-PowerVDFN	8-SOP Advance (5x5)	1.6W (Ta), 32W (Tc)	N-Channel	60V	14A (Ta)	14 mOhm @ 7A, 10V	4V @ 200µA	16nC @ 10V	1300pF @ 30V	6.5V, 10V	±20V
	TPH14006NH,L1Q	RFQ VIEW	PDF RFQ	3,158 In-stock	Toshiba Semiconductor and Storage	MOSFET N CH 60V 14A 8-SOP ADV		U-MOSVIII-H	Active	Cut Tape (CT)	MOSFET (Metal Oxide)	150°C (TJ)	Surface Mount	8-PowerVDFN	8-SOP Advance (5x5)	1.6W (Ta), 32W (Tc)	N-Channel	60V	14A (Ta)	14 mOhm @ 7A, 10V	4V @ 200µA	16nC @ 10V	1300pF @ 30V	6.5V, 10V	±20V
	TPH14006NH,L1Q	RFQ VIEW	PDF RFQ	2,393 In-stock	Toshiba Semiconductor and Storage	MOSFET N CH 60V 14A 8-SOP ADV		U-MOSVIII-H	Active	Tape & Reel (TR)	MOSFET (Metal Oxide)	150°C (TJ)	Surface Mount	8-PowerVDFN	8-SOP Advance (5x5)	1.6W (Ta), 32W (Tc)	N-Channel	60V	14A (Ta)	14 mOhm @ 7A, 10V	4V @ 200µA	16nC @ 10V	1300pF @ 30V	6.5V, 10V	±20V
	SSM6J511NU,LF	RFQ VIEW	PDF RFQ	2,855 In-stock	Toshiba Semiconductor and Storage	MOSFET P-CH 12V 14A UDFN6B		U-MOSVII	Active	Digi-Reel®	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Surface Mount	6-WDFN Exposed Pad	6-UDFNB (2x2)	1.25W (Ta)	P-Channel	12V	14A (Ta)	9.1 mOhm @ 4A, 8V	1V @ 1mA	47nC @ 4.5V	3350pF @ 6V	1.8V, 8V	±10V
	SSM6J511NU,LF	RFQ VIEW	PDF RFQ	3,821 In-stock	Toshiba Semiconductor and Storage	MOSFET P-CH 12V 14A UDFN6B		U-MOSVII	Active	Cut Tape (CT)	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Surface Mount	6-WDFN Exposed Pad	6-UDFNB (2x2)	1.25W (Ta)	P-Channel	12V	14A (Ta)	9.1 mOhm @ 4A, 8V	1V @ 1mA	47nC @ 4.5V	3350pF @ 6V	1.8V, 8V	±10V
	SSM6J511NU,LF	RFQ VIEW	PDF RFQ	2,950 In-stock	Toshiba Semiconductor and Storage	MOSFET P-CH 12V 14A UDFN6B		U-MOSVII	Active	Tape & Reel (TR)	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Surface Mount	6-WDFN Exposed Pad	6-UDFNB (2x2)	-	P-Channel	12V	14A (Ta)	9.1 mOhm @ 4A, 8V	1V @ 1mA	47nC @ 4.5V	3350pF @ 6V	-	-

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