Operating Temperature :
Supplier Device Package :
Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
Vgs (Max) :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
SSM6J409TU(TE85L,F
RFQ
VIEW
RFQ
2,861
In-stock
Toshiba Semiconductor and Storage MOSFET P-CH 20V 9.5A UF6 U-MOSV Obsolete Digi-Reel® MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 6-SMD, Flat Leads UF6 1W (Ta) P-Channel - 20V 9.5A (Ta) 22.1 mOhm @ 3A, 4.5V 1V @ 1mA 15nC @ 4.5V 1100pF @ 10V 1.5V, 4.5V ±8V
SSM6J409TU(TE85L,F
RFQ
VIEW
RFQ
2,763
In-stock
Toshiba Semiconductor and Storage MOSFET P-CH 20V 9.5A UF6 U-MOSV Obsolete Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 6-SMD, Flat Leads UF6 1W (Ta) P-Channel - 20V 9.5A (Ta) 22.1 mOhm @ 3A, 4.5V 1V @ 1mA 15nC @ 4.5V 1100pF @ 10V 1.5V, 4.5V ±8V
SSM6J409TU(TE85L,F
RFQ
VIEW
RFQ
1,139
In-stock
Toshiba Semiconductor and Storage MOSFET P-CH 20V 9.5A UF6 U-MOSV Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 6-SMD, Flat Leads UF6 1W (Ta) P-Channel - 20V 9.5A (Ta) 22.1 mOhm @ 3A, 4.5V 1V @ 1mA 15nC @ 4.5V 1100pF @ 10V 1.5V, 4.5V ±8V
TK10A80W,S4X
RFQ
VIEW
RFQ
2,138
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 800V 9.5A TO220SIS DTMOSIV Active Tube MOSFET (Metal Oxide) 150°C Through Hole TO-220-3 Full Pack TO-220SIS 40W (Tc) N-Channel - 800V 9.5A (Ta) 550 mOhm @ 4.8A, 10V 4V @ 450µA 19nC @ 10V 1150pF @ 300V 10V ±20V