Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
TK25E06K3,S1X(S
RFQ
VIEW
RFQ
2,908
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 60V 25A TO-220AB U-MOSIV Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 TO-220-3 60W (Tc) N-Channel 60V 25A (Ta) 18 mOhm @ 12.5A, 10V - 29nC @ 10V - - -
TPCA8016-H(TE12LQM
RFQ
VIEW
RFQ
3,959
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 60V 25A 8-SOPA - Obsolete Digi-Reel® MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-SOP Advance (5x5) 1.6W (Ta), 45W (Tc) N-Channel 60V 25A (Ta) 21 mOhm @ 13A, 10V 2.3V @ 1mA 22nC @ 10V 1375pF @ 10V 4.5V, 10V ±20V