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Picture	Mfr Part #	QUANTITY		Inventory	MANUFACTURE	Description	Package	Series	Part Status	Packaging	Technology	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package	Power Dissipation (Max)	FET Type	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)
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	TK50E06K3A,S1X(S	RFQ VIEW	PDF RFQ	2,901 In-stock	Toshiba Semiconductor and Storage	MOSFET N-CH 60V 50A TO-220AB		U-MOSIV	Active	Tube	MOSFET (Metal Oxide)	-	Through Hole	TO-220-3	TO-220-3	-	N-Channel	-	60V	50A (Tc)	8.5 mOhm @ 25A, 10V	-	54nC @ 10V	-	-	-
	TK25E06K3,S1X(S	RFQ VIEW	PDF RFQ	2,908 In-stock	Toshiba Semiconductor and Storage	MOSFET N-CH 60V 25A TO-220AB		U-MOSIV	Active	Tube	MOSFET (Metal Oxide)	150°C (TJ)	Through Hole	TO-220-3	TO-220-3	60W (Tc)	N-Channel	-	60V	25A (Ta)	18 mOhm @ 12.5A, 10V	-	29nC @ 10V	-	-	-
	TK70D06J1(Q)	RFQ VIEW	PDF RFQ	3,959 In-stock	Toshiba Semiconductor and Storage	MOSFET N-CH 60V 70A TO220W		-	Obsolete	Tube	MOSFET (Metal Oxide)	150°C (TJ)	Through Hole	TO-220-3	TO-220(W)	45W (Tc)	N-Channel	-	60V	70A (Ta)	6.4 mOhm @ 35A, 10V	2.3V @ 1mA	87nC @ 10V	5450pF @ 10V	4.5V, 10V	±20V
	TK4R3E06PL,S1X	RFQ VIEW	PDF RFQ	1,556 In-stock	Toshiba Semiconductor and Storage	X35 PB-F POWER MOSFET TRANSISTOR		U-MOSIX-H	Active	Tube	MOSFET (Metal Oxide)	175°C (TJ)	Through Hole	TO-220-3	TO-220	87W (Tc)	N-Channel	-	60V	80A (Tc)	7.2 mOhm @ 15A, 4.5V	2.5V @ 500µA	48.2nC @ 10V	3280pF @ 30V	4.5V, 10V	±20V
	TK58E06N1,S1X	RFQ VIEW	PDF RFQ	2,779 In-stock	Toshiba Semiconductor and Storage	MOSFET N CH 60V 58A TO-220		U-MOSVIII-H	Active	Tube	MOSFET (Metal Oxide)	150°C (TJ)	Through Hole	TO-220-3	TO-220	110W (Tc)	N-Channel	-	60V	58A (Ta)	5.4 mOhm @ 29A, 10V	4V @ 500µA	46nC @ 10V	3400pF @ 30V	10V	±20V
	TK30E06N1,S1X	RFQ VIEW	PDF RFQ	1,839 In-stock	Toshiba Semiconductor and Storage	MOSFET N-CH 60V 43A TO-220		U-MOSVIII-H	Active	Tube	MOSFET (Metal Oxide)	150°C (TJ)	Through Hole	TO-220-3	TO-220	53W (Tc)	N-Channel	-	60V	43A (Ta)	15 mOhm @ 15A, 10V	4V @ 200µA	16nC @ 10V	1050pF @ 30V	10V	±20V
	TK40E06N1,S1X	RFQ VIEW	PDF RFQ	3,209 In-stock	Toshiba Semiconductor and Storage	MOSFET N CH 60V 40A TO-220		U-MOSVIII-H	Active	Tube	MOSFET (Metal Oxide)	150°C (TJ)	Through Hole	TO-220-3	TO-220	67W (Tc)	N-Channel	-	60V	40A (Ta)	10.4 mOhm @ 20A, 10V	4V @ 300µA	23nC @ 10V	1700pF @ 30V	10V	±20V
	TK100E06N1,S1X	RFQ VIEW	PDF RFQ	1,498 In-stock	Toshiba Semiconductor and Storage	MOSFET N CH 60V 100A TO-220		U-MOSVIII-H	Active	Tube	MOSFET (Metal Oxide)	150°C (TJ)	Through Hole	TO-220-3	TO-220	255W (Tc)	N-Channel	-	60V	100A (Ta)	2.3 mOhm @ 50A, 10V	4V @ 1mA	140nC @ 10V	10500pF @ 30V	10V	±20V

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