- Series :
- Operating Temperature :
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
- Vgs (Max) :
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3 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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3,305
In-stock
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Toshiba Semiconductor and Storage | MOSFET P-CH 40V 10A DPAK-3 | U-MOSVI | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK+ | 27W (Tc) | P-Channel | - | 40V | 10A (Ta) | 44 mOhm @ 5A, 10V | 3V @ 1mA | 19nC @ 10V | 930pF @ 10V | 6V, 10V | +10V, -20V | |||
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VIEW |
3,505
In-stock
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Toshiba Semiconductor and Storage | MOSFET P-CH 60V 8A DPAK-3 | U-MOSVI | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK+ | 27W (Tc) | P-Channel | - | 60V | 8A (Ta) | 104 mOhm @ 4A, 10V | 3V @ 1mA | 19nC @ 10V | 890pF @ 10V | 6V, 10V | +10V, -20V | |||
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VIEW |
2,261
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 40V 20A DPAK-3 | U-MOSVI-H | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 27W (Tc) | N-Channel | - | 40V | 20A (Ta) | 29 mOhm @ 10A, 10V | 2.3V @ 100µA | 15nC @ 10V | 985pF @ 10V | 4.5V, 10V | ±20V |