- Series :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
-
- 1 Ohm @ 2.9A, 10V (1)
- 1.11 Ohm @ 3A, 10V (1)
- 1.2 Ohm @ 2.6A, 10V (1)
- 1.43 Ohm @ 2.5A, 10V (1)
- 1.67 Ohm @ 2.3A, 10V (1)
- 1.9 Ohm @ 1.8A, 10V (1)
- 110 mOhm @ 13.8A, 10V (1)
- 2.25 Ohm @ 1.5A, 10V (1)
- 2.51 Ohm @ 1.3A, 10V (1)
- 250 mOhm @ 6.9A, 10V (1)
- 290 mOhm @ 5.8A, 10V (1)
- 3.26 Ohm @ 1A, 10V (1)
- 300 mOhm @ 6.9A, 10V (1)
- 380 mOhm @ 6.5A, 10V (1)
- 390 mOhm @ 5.5A, 10V (1)
- 500 mOhm @ 4.6A, 10V (1)
- 560 mOhm @ 3.5A, 10V (1)
- 650 mOhm @ 3.9A, 10V (1)
- 780 mOhm @ 3.4A, 10V (1)
- 80 mOhm @ 17.5A, 10V (1)
- 840 mOhm @ 4A, 10V (1)
- 95 mOhm @ 17.5A, 10V (1)
- 980 mOhm @ 3.5A, 10V (1)
- Input Capacitance (Ciss) (Max) @ Vds :
-
- 1050pF @ 25V (1)
- 1200pF @ 25V (1)
- 1300pF @ 300V (2)
- 1350pF @ 25V (1)
- 3000pF @ 300V (1)
- 380pF @ 25V (1)
- 380pF @ 300V (2)
- 390pF @ 300V (1)
- 4100pF @ 300V (2)
- 490pF @ 25V (1)
- 490pF @ 300V (1)
- 540pF @ 25V (1)
- 570pF @ 300V (1)
- 600pF @ 25V (1)
- 700pF @ 25V (1)
- 700pF @ 300V (1)
- 730pF @ 300V (1)
- 800pF @ 25V (1)
- 890pF @ 300V (1)
- 950pF @ 10V (1)
- Applied Filters :
23 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GLOBAL STOCKS | ||||||||||||||||||||||||||
|
VIEW |
3,460
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 650V 3.5A TO-220SIS | π-MOSVII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 35W (Tc) | N-Channel | - | 650V | 3.5A (Ta) | 1.9 Ohm @ 1.8A, 10V | 4.4V @ 1mA | 12nC @ 10V | 600pF @ 25V | 10V | ±30V | |||
|
VIEW |
912
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 650V 7A TO-220SIS | π-MOSVII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 45W (Tc) | N-Channel | - | 650V | 7A (Ta) | 980 mOhm @ 3.5A, 10V | 4V @ 1mA | 24nC @ 10V | 1200pF @ 25V | 10V | ±30V | |||
|
VIEW |
1,870
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 650V 11.1A TO-220 | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 35W (Tc) | N-Channel | - | 650V | 11.1A (Ta) | 390 mOhm @ 5.5A, 10V | 3.5V @ 450µA | 25nC @ 10V | 890pF @ 300V | 10V | ±30V | |||
|
VIEW |
2,175
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 650V 11.5A TO220SIS | DTMOSV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 35W (Tc) | N-Channel | - | 650V | 11.5A (Tc) | 290 mOhm @ 5.8A, 10V | 4V @ 450µA | 25nC @ 10V | 730pF @ 300V | 10V | ±30V | |||
|
VIEW |
2,110
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 650V 7A TO220SIS | DTMOSV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 30W | N-Channel | - | 650V | 7A (Tc) | 560 mOhm @ 3.5A, 10V | 4V @ 240µA | 14.5nC @ 10V | 380pF @ 300V | 10V | ±30V | |||
|
VIEW |
1,748
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 650V 35A TO-220 | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 50W (Tc) | N-Channel | - | 650V | 35A (Ta) | 80 mOhm @ 17.5A, 10V | 3.5V @ 2.1mA | 100nC @ 10V | 4100pF @ 300V | 10V | ±30V | |||
|
VIEW |
2,870
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 650V 13.7A TO-220 | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 40W (Tc) | N-Channel | - | 650V | 13.7A (Ta) | 300 mOhm @ 6.9A, 10V | 4.5V @ 690µA | 40nC @ 10V | 1300pF @ 300V | 10V | ±30V | |||
|
VIEW |
2,647
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 650V 9.3A TO-220SIS | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 30W (Tc) | N-Channel | - | 650V | 9.3A (Ta) | 500 mOhm @ 4.6A, 10V | 3.5V @ 350µA | 20nC @ 10V | 700pF @ 300V | 10V | ±30V | |||
|
VIEW |
1,939
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 650V 7.8A TO-220SIS | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 30W (Tc) | N-Channel | - | 650V | 7.8A (Ta) | 650 mOhm @ 3.9A, 10V | 3.5V @ 300µA | 16nC @ 10V | 570pF @ 300V | 10V | ±30V | |||
|
VIEW |
1,948
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 650V 5.8A TO-220SIS | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 30W (Tc) | N-Channel | - | 650V | 5.8A (Ta) | 1 Ohm @ 2.9A, 10V | 3.5V @ 180µA | 11nC @ 10V | 390pF @ 300V | 10V | ±30V | |||
|
VIEW |
3,857
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 650V 6.8A TO-220SIS | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 30W (Tc) | N-Channel | - | 650V | 6.8A (Ta) | 780 mOhm @ 3.4A, 10V | 3.5V @ 250µA | 15nC @ 10V | 490pF @ 300V | 10V | ±30V | |||
|
VIEW |
1,016
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 650V 5A TO-220SIS | π-MOSVII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 40W (Tc) | N-Channel | - | 650V | 5A (Ta) | 1.43 Ohm @ 2.5A, 10V | 4V @ 1mA | 16nC @ 10V | 800pF @ 25V | 10V | ±30V | |||
|
VIEW |
1,051
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 650V 3A TO-220SIS | π-MOSVII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 35W (Tc) | N-Channel | - | 650V | 3A (Ta) | 2.25 Ohm @ 1.5A, 10V | 4.4V @ 1mA | 11nC @ 10V | 540pF @ 25V | 10V | ±30V | |||
|
VIEW |
3,275
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 650V 4.5A TO-220SIS | π-MOSVII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 35W (Tc) | N-Channel | - | 650V | 4.5A (Ta) | 1.67 Ohm @ 2.3A, 10V | 4.4V @ 1mA | 16nC @ 10V | 700pF @ 25V | 10V | ±30V | |||
|
VIEW |
821
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 650V 2.5A TO-220SIS | π-MOSVII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 35W (Tc) | N-Channel | - | 650V | 2.5A (Ta) | 2.51 Ohm @ 1.3A, 10V | 4.4V @ 1mA | 11nC @ 10V | 490pF @ 25V | 10V | ±30V | |||
|
VIEW |
3,543
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 650V 2A TO-220SIS | π-MOSVII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 30W (Tc) | N-Channel | - | 650V | 2A (Ta) | 3.26 Ohm @ 1A, 10V | 4.4V @ 1mA | 9nC @ 10V | 380pF @ 25V | 10V | ±30V | |||
|
VIEW |
1,089
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 650V 27.6A TO-220SIS | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 45W (Tc) | N-Channel | - | 650V | 27.6A (Ta) | 110 mOhm @ 13.8A, 10V | 3.5V @ 1.6mA | 75nC @ 10V | 3000pF @ 300V | 10V | ±30V | |||
|
VIEW |
3,062
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 650V 5A TO-220SIS | π-MOSVII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 45W (Tc) | N-Channel | - | 650V | 6A (Ta) | 1.11 Ohm @ 3A, 10V | 4V @ 1mA | 20nC @ 10V | 1050pF @ 25V | 10V | ±30V | |||
|
VIEW |
2,580
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 650V 35A TO220SIS | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 50W (Tc) | N-Channel | - | 650V | 35A (Ta) | 95 mOhm @ 17.5A, 10V | 4.5V @ 2.1mA | 115nC @ 10V | 4100pF @ 300V | 10V | ±30V | |||
|
VIEW |
1,235
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 650V 13.7A TO-220 | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 40W (Tc) | N-Channel | - | 650V | 13.7A (Ta) | 250 mOhm @ 6.9A, 10V | 3.5V @ 690µA | 35nC @ 10V | 1300pF @ 300V | 10V | ±30V | |||
|
VIEW |
1,480
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 650V 5A TO-220SIS | π-MOSVII | Active | Bulk | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 45W (Tc) | N-Channel | - | 650V | 8A (Ta) | 840 mOhm @ 4A, 10V | 4V @ 1mA | 25nC @ 10V | 1350pF @ 25V | 10V | ±30V | |||
|
VIEW |
2,768
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 650V 5.2A TO-220SIS | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 30W (Tc) | N-Channel | - | 650V | 5.2A (Ta) | 1.2 Ohm @ 2.6A, 10V | 3.5V @ 170µA | 10.5nC @ 10V | 380pF @ 300V | 10V | ±30V | |||
|
VIEW |
1,166
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 650V 13A TO-220SIS | DTMOSII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 40W (Tc) | N-Channel | - | 650V | 13A (Ta) | 380 mOhm @ 6.5A, 10V | 5V @ 1mA | 17nC @ 10V | 950pF @ 10V | 10V | ±30V |