Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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TPC6010-H(TE85L,FM
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RFQ
3,250
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 60V 6.1A VS6 U-MOSVI-H Active Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount SOT-23-6 Thin, TSOT-23-6 VS-6 (2.9x2.8) 700mW (Ta) N-Channel - 60V 6.1A (Ta) 59 mOhm @ 3.1A, 10V 2.3V @ 100µA 12nC @ 10V 830pF @ 10V 4.5V, 10V ±20V
2SK3462(TE16L1,NQ)
RFQ
VIEW
RFQ
913
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 250V 3A PW-MOLD - Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 PW-MOLD 20W (Tc) N-Channel - 250V 3A (Ta) 1.7 Ohm @ 1.5A, 10V 3.5V @ 1mA 12nC @ 10V 267pF @ 10V 10V ±20V
2SK2231(TE16R1,NQ)
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VIEW
RFQ
1,928
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 60V 5A PW-MOLD - Discontinued at Digi-Key Digi-Reel® MOSFET (Metal Oxide) 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 PW-MOLD 20W (Tc) N-Channel - 60V 5A (Ta) 160 mOhm @ 2.5A, 10V 2V @ 1mA 12nC @ 10V 370pF @ 10V 4V, 10V ±20V
2SK2231(TE16R1,NQ)
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VIEW
RFQ
908
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 60V 5A PW-MOLD - Discontinued at Digi-Key Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 PW-MOLD 20W (Tc) N-Channel - 60V 5A (Ta) 160 mOhm @ 2.5A, 10V 2V @ 1mA 12nC @ 10V 370pF @ 10V 4V, 10V ±20V
2SK2231(TE16R1,NQ)
RFQ
VIEW
RFQ
2,237
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 60V 5A PW-MOLD - Active Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 PW-MOLD 20W (Tc) N-Channel - 60V 5A (Ta) 160 mOhm @ 2.5A, 10V 2V @ 1mA 12nC @ 10V 370pF @ 10V 4V, 10V ±20V
TPN22006NH,LQ
RFQ
VIEW
RFQ
2,320
In-stock
Toshiba Semiconductor and Storage MOSFET N CH 60V 9A 8-TSON U-MOSVIII-H Active Digi-Reel® MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-TSON Advance (3.3x3.3) 700mW (Ta), 18W (Tc) N-Channel - 60V 9A (Ta) 22 mOhm @ 4.5A, 10V 4V @ 100µA 12nC @ 10V 710pF @ 30V 6.5V, 10V ±20V
TPN22006NH,LQ
RFQ
VIEW
RFQ
2,638
In-stock
Toshiba Semiconductor and Storage MOSFET N CH 60V 9A 8-TSON U-MOSVIII-H Active Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-TSON Advance (3.3x3.3) 700mW (Ta), 18W (Tc) N-Channel - 60V 9A (Ta) 22 mOhm @ 4.5A, 10V 4V @ 100µA 12nC @ 10V 710pF @ 30V 6.5V, 10V ±20V
TPN22006NH,LQ
RFQ
VIEW
RFQ
1,446
In-stock
Toshiba Semiconductor and Storage MOSFET N CH 60V 9A 8-TSON U-MOSVIII-H Active Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-TSON Advance (3.3x3.3) 700mW (Ta), 18W (Tc) N-Channel - 60V 9A (Ta) 22 mOhm @ 4.5A, 10V 4V @ 100µA 12nC @ 10V 710pF @ 30V 6.5V, 10V ±20V