- Series :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Applied Filters :
10 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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GLOBAL STOCKS | ||||||||||||||||||||||||
VIEW |
3,061
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 100V 50A TO-220AB | - | Active | Tube | - | - | Through Hole | TO-220-3 | - | - | - | - | - | - | - | - | - | - | ||||
VIEW |
3,548
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 75V 50A TO-220AB | - | Active | Tube | MOSFET (Metal Oxide) | - | Through Hole | TO-220-3 | - | N-Channel | 75V | 50A (Tc) | 12 mOhm @ 25A, 10V | - | 55nC @ 10V | - | - | - | ||||
VIEW |
3,453
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 60V 50A TO-220AB | U-MOSIV | Active | Tube | - | - | Through Hole | TO-220-3 | - | - | - | - | - | - | - | - | - | - | ||||
VIEW |
2,901
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 60V 50A TO-220AB | U-MOSIV | Active | Tube | MOSFET (Metal Oxide) | - | Through Hole | TO-220-3 | - | N-Channel | 60V | 50A (Tc) | 8.5 mOhm @ 25A, 10V | - | 54nC @ 10V | - | - | - | ||||
VIEW |
1,697
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 250V 13A TO-220AB | - | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 | 102W (Tc) | N-Channel | 250V | 13A (Ta) | 250 mOhm @ 6.5A, 10V | 3.5V @ 1mA | 25nC @ 10V | 1100pF @ 100V | 10V | ±20V | ||||
VIEW |
2,908
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 60V 25A TO-220AB | U-MOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 | 60W (Tc) | N-Channel | 60V | 25A (Ta) | 18 mOhm @ 12.5A, 10V | - | 29nC @ 10V | - | - | - | ||||
VIEW |
1,179
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 100V 40A TO-220AB | U-MOSIV | Active | Tube | MOSFET (Metal Oxide) | - | Through Hole | TO-220-3 | - | N-Channel | 100V | 40A (Ta) | 15 mOhm @ 20A, 10V | 4V @ 1mA | 84nC @ 10V | 4000pF @ 10V | - | - | ||||
VIEW |
1,596
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 75V 60A TO-220AB | - | Active | Tube | MOSFET (Metal Oxide) | - | Through Hole | TO-220-3 | 128W | N-Channel | 75V | 60A | 9 mOhm @ 30A, 10V | - | 75nC @ 10V | - | - | - | ||||
VIEW |
2,644
In-stock
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Toshiba Semiconductor and Storage | MOSFET N CH 120V 72A TO-220 | U-MOSVIII-H | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 | 255W (Tc) | N-Channel | 120V | 72A (Ta) | 4.4 mOhm @ 36A, 10V | 4V @ 1mA | 130nC @ 10V | 8100pF @ 60V | 10V | ±20V | ||||
VIEW |
3,127
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 100V 18A TO-220AB | U-MOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 | - | N-Channel | 100V | 18A (Ta) | 42 mOhm @ 9A, 10V | - | 33nC @ 10V | - | - | - |