Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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TSM260P02CX6 RFG
RFQ
VIEW
RFQ
3,900
In-stock
Taiwan Semiconductor Corporation MOSFET P-CHANNEL 20V 6.5A SOT26 - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount SOT-23-6 SOT-26 1.56W (Tc) P-Channel 20V 6.5A (Tc) 26 mOhm @ 5A, 4.5V 1V @ 250µA 19.5nC @ 4.5V 1670pF @ 15V 1.8V, 4.5V ±10V
TSM160P02CS RLG
RFQ
VIEW
RFQ
3,412
In-stock
Taiwan Semiconductor Corporation MOSFET P-CHANNEL 20V 11A 8SOP - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SOP 2.5W (Tc) P-Channel 20V 11A (Tc) 16 mOhm @ 6A, 4.5V 1V @ 250µA 27nC @ 4.5V 2320pF @ 15V 1.8V, 4.5V ±10V
TSM500P02CX RFG
RFQ
VIEW
RFQ
3,335
In-stock
Taiwan Semiconductor Corporation MOSFET P-CHANNEL 20V 4.7A SOT23 - Active Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 SOT-23 1.56W (Tc) P-Channel 20V 4.7A (Tc) 50 mOhm @ 3A, 4.5V 800mV @ 250µA 9.6nC @ 4.5V 850pF @ 10V 1.8V, 4.5V ±10V
TSM650P02CX RFG
RFQ
VIEW
RFQ
3,184
In-stock
Taiwan Semiconductor Corporation MOSFET P-CHANNEL 20V 4.1A SOT23 - Active Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 SOT-23 1.56W (Tc) P-Channel 20V 4.1A (Tc) 65 mOhm @ 3A, 4.5V 800mV @ 250µA 5.1nC @ 4.5V 515pF @ 10V 1.8V, 4.5V ±10V