- Mounting Type :
- Supplier Device Package :
- Power Dissipation (Max) :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
- Applied Filters :
3 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GLOBAL STOCKS | |||||||||||||||||||||||||
VIEW |
1,004
In-stock
|
Taiwan Semiconductor Corporation | MOSFET N-CH 60V 300MA SOT23 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23 | 300mW (Ta) | N-Channel | 60V | 300mA (Ta) | 2 Ohm @ 300mA, 10V | 2.5V @ 250µA | 0.4nC @ 4.5V | 30pF @ 25V | 4.5V, 10V | ±20V | ||||
VIEW |
1,021
In-stock
|
Taiwan Semiconductor Corporation | MOSFET N-CH 800V 300MA SOT223 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 | 2.1W (Tc) | N-Channel | 800V | 300mA (Ta) | 21.6 Ohm @ 150mA, 10V | 5V @ 250µA | 6nC @ 10V | 200pF @ 25V | 10V | ±30V | ||||
VIEW |
3,049
In-stock
|
Taiwan Semiconductor Corporation | MOSFET N-CHANNEL 60V 300MA TO92 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92 | 400mW (Ta) | N-Channel | 60V | 300mA (Ta) | 5 Ohm @ 100mA, 10V | 2.5V @ 250µA | 0.4nC @ 4.5V | 7.32pF @ 25V | 5V, 10V | ±20V |