Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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TSM210N06CZ C0G
RFQ
VIEW
RFQ
2,320
In-stock
Taiwan Semiconductor Corporation MOSFET N-CHANNEL 60V 210A TO220 - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220 250W (Tc) N-Channel 60V 210A (Tc) 3.1 mOhm @ 90A, 10V 4V @ 250µA 160nC @ 10V 7900pF @ 30V 10V ±20V
TSM100N06CZ C0G
RFQ
VIEW
RFQ
3,279
In-stock
Taiwan Semiconductor Corporation MOSFET N-CHANNEL 60V 100A TO220 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220 167W (Tc) N-Channel 60V 100A (Tc) 6.7 mOhm @ 30A, 10V 4V @ 250µA 92nC @ 10V 4382pF @ 30V 10V ±20V
TSM340N06CH X0G
RFQ
VIEW
RFQ
2,445
In-stock
Taiwan Semiconductor Corporation MOSFET N-CHANNEL 60V 30A TO251 - Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-251-3 Stub Leads, IPak TO-251 (IPAK) 66W (Tc) N-Channel 60V 30A (Tc) 34 mOhm @ 15A, 10V 2.5V @ 250µA 16.6nC @ 10V 1180pF @ 30V 4.5V, 10V ±20V
TSM900N06CH X0G
RFQ
VIEW
RFQ
2,333
In-stock
Taiwan Semiconductor Corporation MOSFET N-CHANNEL 60V 11A TO251 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-251-3 Stub Leads, IPak TO-251 (IPAK) 25W (Tc) N-Channel 60V 11A (Tc) 90 mOhm @ 6A, 10V 2.5V @ 250µA 9.3nC @ 10V 500pF @ 15V 4.5V, 10V ±20V
TSM170N06CH C5G
RFQ
VIEW
RFQ
3,992
In-stock
Taiwan Semiconductor Corporation MOSFET N-CHANNEL 60V 38A TO251 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA TO-251 (IPAK) 46W (Tc) N-Channel 60V 38A (Tc) 17 mOhm @ 20A, 10V 2.5V @ 250µA 28.5nC @ 10V 900pF @ 25V 4.5V, 10V ±20V