- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Applied Filters :
3 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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1,366
In-stock
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Taiwan Semiconductor Corporation | MOSFET N-CH 800V 5.5A TO252 | - | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252, (D-Pak) | 110W (Tc) | N-Channel | 800V | 5.5A (Tc) | 1.2 Ohm @ 2.75A, 10V | 4V @ 250µA | 19.4nC @ 10V | 685pF @ 100V | 10V | ±30V | |||
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3,331
In-stock
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Taiwan Semiconductor Corporation | MOSFET N-CHANNEL 800V 6A TO252 | - | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252, (D-Pak) | 110W (Tc) | N-Channel | 800V | 6A (Tc) | 950 mOhm @ 3A, 10V | 4V @ 250µA | 19.6nC @ 10V | 691pF @ 100V | 10V | ±30V | |||
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VIEW |
817
In-stock
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Taiwan Semiconductor Corporation | MOSFET N-CHANNEL 800V 3A TO252 | - | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252, (D-Pak) | 94W (Tc) | N-Channel | 800V | 3A (Tc) | 4.2 Ohm @ 1.5A, 10V | 4V @ 250µA | 19nC @ 10V | 696pF @ 25V | 10V | ±30V |